30DF6(Z) datasheet, PDF - EEWORLD Datasheet

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30DF6(Z): DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,; CategoryDiscrete semiconductor diode; File Size56KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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30DF6(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,

30DF6(Z) Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JEDEC-95 code	DO-27
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	200 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.4 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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BL

FEATURES

Low cos t

GALAXY ELECTRICAL

30DF4(Z) ---30DF6(Z)

VOLT AGE RANGE: 400 --- 600 V

CURRENT : 3.0 A

FAST RECOVERY RECT IFIERS

DO - 27

D iffus ed junction

Low leakage

Low forward voltage drop

High current capability

Eas ily cleaned w ith Freon Alcohol,Is opropanol and

s im ilar s olvents

MECHANICAL DATA

Cas e:JEDEC DO--27,m olded plas tic

Term inals : Axial lead ,s olderable per

MIL- STD -202,Method 208

Polarity: Color band denotes cathode

Weight: 0.041ounces ,1.15 gram s

Mounting pos ition: Any

MAXIM UM RATINGS AND ELECTRICAL CHARACTERISTICS

R atings at 25

am bient tem perature unles s otherwis e s pecified.

Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20% .

30DF4

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average f orw ard rectif ied current

9.5mm lead length,

@T

A

=75

30DF6

600

420

600

3.0

UNITS

V

A

V

RRM

V

R MS

V

DC

I

F (AV)

400

280

400

Peak f orw ard surge current

10ms single half -sine-w ave

superimposed on rated load

@T

J

=125

I

F SM

200.0

A

Maximum instantaneous f orw ard v oltage

@ 3.0A

Maximum reverse current

at rated DC bloc king voltage

@T

A

=25

@T

A

=100

V

F

I

R

t

rr

C

J

R

θ

JA

T

J

T

STG

1.2

10.0

200.0

400

32

22

-55 ---- + 150

V

A

ns

pF

/W

Maximum reverse recovery time (Note1)

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

Operating junction temperature range

Storage temperature range

N OTE:1. Measured with I

F

=0.5A, I

R

=1A, I

rr

=0.25A.

2.Meas ured at 1.0MH

Z

and applied rev erse v oltage of 4.0V D C .

3.Therm al resistance f rom junc tion to am bient.

www.galaxycn.com

Document Number 0261031

BL

GALAXY ELECTRICAL

1.

30DF6(Z) Related Products

	30DF6(Z)	30DF4(Z)
Description	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,
Is it Rohs certified?	conform to	conform to
package instruction	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
application	FAST RECOVERY	FAST RECOVERY
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V
JEDEC-95 code	DO-27	DO-27
JESD-30 code	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	200 A	200 A
Number of components	1	1
Phase	1	1
Number of terminals	2	2
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C
Maximum output current	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	600 V	400 V
Maximum reverse current	10 µA	10 µA
Maximum reverse recovery time	0.4 µs	0.4 µs
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	AXIAL	AXIAL
Base Number Matches	1	1

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