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30DF4(Z)

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,
CategoryDiscrete semiconductor    diode   
File Size56KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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30DF4(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,

30DF4(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage400 V
Maximum reverse current10 µA
Maximum reverse recovery time0.4 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BL
FEATURES
Low cos t
GALAXY ELECTRICAL
30DF4(Z) ---30DF6(Z)
VOLT AGE RANGE: 400 --- 600 V
CURRENT : 3.0 A
FAST RECOVERY RECT IFIERS
DO - 27
D iffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned w ith Freon Alcohol,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD -202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces ,1.15 gram s
Mounting pos ition: Any
MAXIM UM RATINGS AND ELECTRICAL CHARACTERISTICS
R atings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20% .
30DF4
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
30DF6
600
420
600
3.0
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
I
F (AV)
400
280
400
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
F SM
200.0
A
Maximum instantaneous f orw ard v oltage
@ 3.0A
Maximum reverse current
at rated DC bloc king voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.2
10.0
200.0
400
32
22
-55 ---- + 150
-55 ---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2.Meas ured at 1.0MH
Z
and applied rev erse v oltage of 4.0V D C .
3.Therm al resistance f rom junc tion to am bient.
www.galaxycn.com
Document Number 0261031
BL
GALAXY ELECTRICAL
1.

30DF4(Z) Related Products

30DF4(Z) 30DF6(Z)
Description Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,
Is it Rohs certified? conform to conform to
package instruction O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
application FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V
JEDEC-95 code DO-27 DO-27
JESD-30 code O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 200 A 200 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 400 V 600 V
Maximum reverse current 10 µA 10 µA
Maximum reverse recovery time 0.4 µs 0.4 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Base Number Matches 1 1

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