DCR604SE
DCR604SE
Phase Control Thyristor
Advance Information
Supersedes January 2000 version, DS4450-4.0
DS4450-5.0 July 2001
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
High Mean Current
s
Fatigue Free
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dI/dt
2100V
706A
8100A
700A/
µ
s
dVdt* 1000V/
µ
s
*Higher dV/dt selections available
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
2100
2000
1900
1800
1700
Conditions
DCR604SE21
DCR604SE20
DCR604SE19
DCR604SE18
DCR604SE17
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 30mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code: E
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR604SE20
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR604SE
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
706
1109
995
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
487
766
646
A
A
A
CURRENT RATINGS
T
case
= 80˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
562
882
770
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
380
595
480
A
A
A
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DCR604SE
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
6.5
0.21 x 10
6
8.1
0.33 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 8.0kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
–55
7.2
125
125
8.8
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.041
0.074
0.092
0.018
0.036
135
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
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DCR604SE
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C. Gate open circuit.
From 67% V
DRM
to 1100A
Gate source 20V, 20Ω
t
r
≤
0.5µs, T
j
= 125
o
C
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 67% V
DRM
, Gate source 10V, 5Ω
t
r
= 0.5µs, T
j
= 25
o
C
T
j
= 25
o
C, V
D
= 5V
T
j
= 25
o
C, V
D
= 5V
Repetitive 50Hz
Non-repetitive
Typ.
-
-
-
-
-
-
-
-
-
Max.
30
1000
350
700
0.93
0.667
1.5
500
70
Units
mA
V/µs
A/µs
A/µs
V
mΩ
µs
mA
mA
µs
dI/dt
Rate of rise of on-state current
V
T(TO)
r
T
t
gd
I
L
I
H
t
q
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
I
T
= 500A, t
p
= 1ms, T
j
= 125˚C,
Turn-off time
V
R
= 50V, dI
RR
/dt = 20A/µs,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/µs linear
300
400
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
See table, gate characteristics curve
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At 67% V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
Max.
3.0
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
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DCR604SE
CURVES
1600
Measured under pulse conditions
T
j
= 125˚C
1400
1000
Instantaneous on-state current, I
T
- (A)
6 phase
1200
Half wave
3 phase
d.c.
1200
Mean power dissipation - (W)
1.0
1.5
Instantaneous on-state voltage, V
T
- (V)
2.0
800
1000
800
600
600
400
400
200
200
0
0.5
00
200
400
600
Mean on-state current, I
T(AV)
- (A)
800
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
A = 1.086551
B = –0.173031
C = –3.307461 x 10
–5
D = 0.056345
these values are valid for T
j
= 125˚C for I
T
500A to 1600A
Where
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