DCR820SG
DCR820SG
Phase Control Thyristor
Supersedes October 2000 version, DS4214-5.1
DS4214-6.0 July 2001
FEATURES
s
s
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt*
dI/dt
6500V
387A
6000A
1000V/
µ
s
100A/
µ
s
Double Side Cooling
High Surge Capability
APPLICATIONS
s
s
s
s
s
High Power Drives
High Voltage Power Supplies
DC Motor Control
Welding
Battery Chargers
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
6500
6400
6300
6200
6100
6000
Conditions
DCR820SG65
DCR820SG64
DCR820SG63
DCR820SG62
DCR820SG61
DCR820SG60
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 50mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
Respectively
Outline type code: G.
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR820SG62
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR820SG
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
387
608
567
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
260
408
357
A
A
A
CURRENT RATINGS
T
case
= 80˚C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
310
485
447
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
204
321
279
A
A
A
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DCR820SG
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
4.8
115 x 10
3
6.0
180 x 10
3
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 12.0kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
–55
10.8
125
150
13.2
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.032
0.064
0.064
0.008
0.016
135
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
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DCR820SG
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C.
From 67% V
DRM
to 1000A,
Gate source 10V, 5Ω
t
r
≤
0.5µs. T
j
= 125
o
C.
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 67% V
DRM
, Gate source 20V, 10Ω
Rise time 0.5µs, T
j
= 25
o
C
T
j
= 25
o
C, V
D
= 20V.
T
j
= 25
o
C, V
D
= 5V, I
T
= 5A, I
TM
= 500A
I
T
= 500A, t
p
= 1ms, T
j
= 125˚C,
V
RM
= 100V, dI
RR
/dt = 10A/µs,
dV
DR
/dt = 25V/µs to 3000V
I
T
= 320A, -dI
T
/dt = 6A/µs
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
-
-
-
-
30
Max.
50
1000
50
100
1.6
3.5
3.3
1
120
Units
mA
V/µs
A/µs
A/µs
V
mΩ
µs
A
mA
µs
dI/dt
Rate of rise of on-state current
V
T(TO)
r
T
t
gd
I
L
I
H
t
q
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
Turn-off time
500
1200
Q
S
Stored charge - triangular approximation
through I
RR
and 25% I
RR
600
1500
µC
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
See Fig.8/9 Gate characteristics curves and table
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
Typ.
-
-
-
-
-
-
-
-
-
Max.
3.0
300
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
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DCR820SG
CURVES
1500
T
j
= 125˚C
600
T
j
= 125˚C
1250
500
Instantaneous on-state current, I
T
- (A)
Instantaneous on-state current, I
T
- (A)
1000
400
750
300
500
200
250
100
0
1.0
2.0
3.0
4.0
5.0
6.0
Instantaneous on-state voltage, V
T
- (V)
7.0
0
1
1.5
2.5
3
3.5
2.0
Instantaneous on-state voltage, V
T
- (V)
4
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum (limit) on-state characteristics
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
A = -0.759775
B = 0.639225
C = 0.004376
D = -0.092153
these values are valid for T
j
= 125˚C for I
T
100A to 1500A
Where
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