FGA15N120AND
IGBT
FGA15N120AND
General Description
Employing NPT technology, Fairchild’s AND series of
IGBTs provides low conduction and switching losses. The
AND series offers solutions for applications such as
induction heating (IH), motor control, general purpose
inverters and uninterruptible power supplies (UPS).
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE(sat)
= 2.4 V @ I
C
= 15A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 210ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
FGA15N120AND
1200
±
20
24
15
45
15
45
200
80
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.63
2.88
40
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
FGA15N120AND
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 3mA
V
GE
= 0V, I
C
= 3mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1200
--
--
--
--
0.6
--
--
--
--
3
± 100
V
V/°C
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 15mA, V
CE
= V
GE
I
C
= 15A
,
V
GE
= 15V
I
C
= 15A
,
V
GE
= 15V,
T
C
= 125°C
I
C
= 24A
,
V
GE
= 15V
3.5
--
--
--
5.5
2.4
2.9
3.0
7.5
3.2
--
--
V
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
1150
120
56
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
90
70
310
60
3.27
0.6
3.68
80
60
310
50
3.41
0.84
4.25
120
9
63
14
--
--
--
120
4.9
0.9
5.8
--
--
--
--
--
--
--
180
14
95
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
nH
V
CC
= 600 V, I
C
= 15A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 600 V, I
C
= 15A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 600 V, I
C
= 15A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 15A
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
I
F
= 15A
dI/dt = 200 A/µs
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.7
1.8
210
280
27
31
2835
4340
Max.
2.7
--
330
--
40
--
6600
--
Units
V
ns
A
nC
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
FGA15N120AND
120
T
C
= 25℃
100
20V
17V
15V
12V
80
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
Collector Current, I
C
[A]
80
60
V
GE
= 10V
40
Collector Current, I
C
[A]
10
60
40
20
20
0
0
2
4
6
8
0
0
2
4
6
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0
Common Emitter
V
GE
= 15V
30
Vcc = 600V
load Current : peak of square wave
24A
Collector-Emitter Voltage, V
CE
[V]
3.5
3.0
I
C
= 15A
Load Current [A]
20
10
2.5
2.0
25
50
75
100
125
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 40W
0
0.1
1
10
100
1000
Case Temperature, T
C
[
℃
]
Frequency [kHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector-Emitter Voltage, V
CE
[V]
16
Collector-Emitter Voltage, V
CE
[V]
16
12
12
8
8
4
I
C
= 7.5A
0
0
4
8
24A
15A
24A
4
15A
I
C
= 7.5A
0
0
4
8
12
16
20
12
16
20
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2003 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
FGA15N120AND Rev. A
FGA15N120AND
2500
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Ciss
1500
2000
100
td(on)
Switching Time [ns]
Capacitance [pF]
tr
1000
Coss
500
Crss
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25℃
T
C
= 125℃
10
0
10
20
30
40
50
60
70
0
1
10
Collector-Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate
Resistance
1000
Switching Loss [mJ]
Switching Time [ns]
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25℃
T
C
= 125℃
10
td(off)
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25℃
T
C
= 125℃
Eon
100
tf
1
Eoff
10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
GE
=
±
15V, R
G
= 20
Ω
T
C
= 25℃
T
C
= 125℃
Common Emitter
V
GE
=
±
15V, R
G
= 20
Ω
T
C
= 25℃
T
C
= 125℃
td(off)
Switching Time [ns]
100
td(on)
Switching Time [ns]
100
tf
tr
5
10
15
20
25
30
5
10
15
20
25
30
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGA15N120AND Rev. A
FGA15N120AND
16
Common Emitter
V
GE
=
±
15V, R
G
= 20
Ω
T
C
= 25℃
T
C
= 125℃
14
Eon
Common Emitter
R
L
= 40Ω
T
C
= 25℃
600V
400V
8
6
4
2
0
5
10
15
20
25
30
0
20
40
60
80
100
120
Vcc = 200V
Gate-Emitter Voltage, V
GE
[V]
10
12
10
Switching Loss [mJ]
1
Eoff
0.1
Collector Current, I
C
[A]
Gate Charge, Q
g
[nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
100
Ic MAX (Pulsed)
Ic MAX (Continuous)
50
µ
s
Collector Current, Ic [A]
10
1ms
DC Operation
1
Collector Current, I
C
[A]
100
µ
s
10
Single Nonrepetitive
0.1
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
o
0.01
1
1
10
Safe Operating Area
V
GE
= 15V, T
C
= 125℃
100
1000
Collector - Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
1E-3
1E-5
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
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