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DF01M

Description
1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size82KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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DF01M Overview

1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

DF01M Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage100 V
Maximum average input current1 A
Processing package descriptionMINIATURE, PLASTIC, CASE DFM, 4 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeIN-line
Terminal formTHROUGH-hole
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage100 V
Maximum non-repetitive peak forward current50 A
DF005M THRU DF10M
MINIATURE GLASS PASSIVATED SINGLE-PHASE-BRIDGE RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Case Style DFM
Forward Current -
1.0 Ampere
FEATURES
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
This series is UL listed under the Recognized Component
Index, file number E54214
Plastic package used has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junctions
Surge overload rating of 50 Amperes peak
Ideal for printed circuit boards
High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
0.130 (3.3)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.075 (1.90)
0.055 (1.39)
0.013 (3.3)
0.0086 (0.22)
MECHANICAL DATA
Case:
Molded plastic body over passivated junctions
Terminals:
Plated lead solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on body
Mounting Position:
Any
Weight:
0.04 ounce, 1.0 gram
0.350 (8.9)
0.300 (7.6)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
DF
005M
DF
01M
DF
02M
DF
04M
DF
06M
DF
08M
DF
10M
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
at T
A
=40°C
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
Rating for fusing (t < 8.3ms)
Maximum instantaneous forward voltage drop
per leg at 1.0A
Maximum reverse current
at rated DC blocking voltage per leg
Typical junction capacitance per leg
(NOTE 1)
Typical thermal resistance per leg
(NOTE 2)
Operating junction and storage temperature range
T
A
=25°C
T
A
=125°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
I
R
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
50.0
10.0
1.1
5.0
500.0
25.0
40.0
15.0
-55 to +150
600
420
600
800 1000 Volts
560
700
Volts
800 1000 Volts
Amp
Amps
A
2
sec
Volts
µA
pF
°C/W
°C
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Thermal resistance from junction to ambient and from junction to lead mounted on
P.C.B. with 0.5 x 0.5" (13 x 13mm) copper pads
4/98

DF01M Related Products

DF01M DF005M DF02M DF04M DF06M DF08M DF10M
Description 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),DIP
Number of terminals 4 - 4 4 4 - -
Number of components 4 - 4 4 4 - -
Maximum average input current 1 A - 1 A 1 A 1 A - -
state DISCONTINUED - ACTIVE ACTIVE ACTIVE - CONSULT MFR
packaging shape Rectangle - RECTANGULAR Rectangle Rectangle - -
Package Size IN-line - IN-LINE IN-line IN-line - -
Terminal form THROUGH-hole - THROUGH-HOLE THROUGH-hole THROUGH-hole - -
Terminal location pair - DUAL pair pair - -
Packaging Materials Plastic/Epoxy - PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy - -
structure Bridge, 4 ELEMENTS - BRIDGE, 4 ELEMENTS Bridge, 4 ELEMENTS Bridge, 4 ELEMENTS - -
Diode component materials silicon - SILICON silicon silicon - -
Diode type bridge rectifier diode - BRIDGE RECTIFIER DIODE bridge rectifier diode bridge rectifier diode - bridge rectifier diode
Phase 1 - 1 1 1 - -
Maximum repetitive peak reverse voltage 100 V - 200 V 400 V 600 V - -
Maximum non-repetitive peak forward current 50 A - 50 A 50 A 50 A - -
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