5962-9315708HXX datasheet, PDF

5962-9315708HXX: DescriptionSRAM Module, 256KX8, 25ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32; Categorystorage storage; File Size117KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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5962-9315708HXX Overview

SRAM Module, 256KX8, 25ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32

Parameter Name	Attribute value
Maker	Microsemi
package instruction	DIP,
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	25 ns
Other features	BATTERY BACK-UP OPERATION
JESD-30 code	R-CDIP-T32
length	42.4 mm
memory density	2097152 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	5.1 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm
Base Number Matches	1

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