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IRKL135-14D20NPBF

Description
Silicon Controlled Rectifier, 300A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size252KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

IRKL135-14D20NPBF Overview

Silicon Controlled Rectifier, 300A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element

IRKL135-14D20NPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PUFM-X3
Reach Compliance Codecompliant
Other featuresUL APPROVED
Shell connectionISOLATED
Nominal circuit commutation break time150 µs
ConfigurationSINGLE WITH BUILT-IN FREE-WHEELING DIODE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current500 mA
JESD-30 codeR-PUFM-X3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum rms on-state current300 A
Maximum repetitive peak off-state leakage current50000 µA
Off-state repetitive peak voltage1400 V
Repeated peak reverse voltage1400 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperature40
Trigger device typeSCR
Base Number Matches1
Bulletin I27101 rev. B 04/98
IRK. SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
INT-A-pakä Power Modules
135 A
140 A
160 A
Description
These series of INT-A-paks modules uses high voltage
power thyristors/ diodes in seven basic configurations.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built. They can be interconnected to
form single phase or three phase bridges or as AC-
switches when modules are connected in anti-parallel.
These modules are intended for general purpose applica-
tions such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
DRM
/ V
RRM
T
J
range
IRK.135.. IRK.141.. IRK.161..
IRK.136.. IRK.142.. IRK.162.. Units
135
85
300
3200
3360
51.5
47
515
140
85
310
4750
5000
113
103
1130
160
85
355
5100
5350
131
119
1310
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
°C
up to 1600 up to 2000 up to 1600
- 40 to 130
- 40 to 125
www.irf.com
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