BAS125...
Silicon Schottky Diodes
•
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
•
Integrated diffused guard ring
•
Low forward voltage
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAS125-04W
!
BAS125-05W
!
BAS125-06W
!
BAS125-07W
"
!
,
,
,
,
,
,
,
,
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BAS125-04W
BAS125-05W
BAS125-06W
BAS125-07W
Package
SOT323
SOT323
SOT323
SOT343
Configuration
series
common cathode
common anode
parallel pair
L
S
(nH)
1.4
1.4
1.4
1.6
Marking
14s
15s
16s
17s
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
Total power dissipation
BAS125-04W, BAS125-06W,
T
S
≤
84°C
BAS125-05W,
T
S
≤
76°C
BAS125-07W,
T
S
≤
96°C
Junction temperature
Storage temperature
1
Pb-containing
Symbol
V
R
I
F
I
FSM
P
tot
Value
25
100
500
Unit
V
mA
mW
250
250
250
T
j
T
stg
150
-55 ... 150
°C
package may be available upon special request
1
2007-04-19
BAS125...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAS125-04W, BAS125-06W
BAS125-05W
BAS125-07W
Symbol
R
thJS
≤
365
≤
295
≤
215
Value
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Reverse current
V
R
= 20 V
V
R
= 25 V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
Forward voltage matching
2)
I
F
= 10 mA
∆
V
F
V
F
-
-
-
-
385
530
800
-
400
650
950
20
I
R
-
-
-
-
100
150
typ.
max.
Unit
nA
mV
AC Characteristics
Diode capacitance
V
R
= 0 ,
f
= 1 MHz
Differential forward resistance
I
F
= 5 mA,
f
= 10 kHz
1
For
2
∆V
C
T
R
F
-
-
-
15
1.1
-
pF
Ω
calculation of
R
thJA
please refer to Application Note Thermal Resistance
F
is the difference between lowest and highest
V
F
in a multiple diode component.
2
2007-04-19
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