BAV70DXV6T5G
Monolithic Dual Switching
Diode Common Cathode
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
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ANODE
1
2
ANODE
3
CATHODE
BAV70DXV6T1
6
CATHODE
5
ANODE
4
ANODE
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage
Temperature Range
R
qJA
T
J
, T
stg
R
qJA
Symbol
P
D
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55
to
+150
Unit
mW
mW/°C
°C/W
1
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
Unit
mW
mW/°C
°C/W
°C
1
A4 M
G
G
Symbol
P
D
A4 = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
ORDERING INFORMATION
Device
BAV70DXV6T5G
Package
SOT−563
(Pb−Free)
Shipping
†
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 4
1
Publication Order Number:
BAV70DXV6T1/D
BAV70DXV6T5G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (Note 2)
(I
(BR)
= 100
mAdc)
Reverse Voltage Leakage Current (Note 2)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 100 Vdc)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance (Note 2)
(V
R
= 0, f = 1.0 MHz)
Forward Voltage (Note 2)
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time (Note 2)
(I
F
= I
R
= 10 mAdc, V
R
= 5.0 Vdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
2. For each individual diode while second diode is unbiased.
R
L
= 100
W
V
(BR)
I
R
100
−
Vdc
mAdc
Symbol
Min
Max
Unit
−
−
−
−
60
2.5
100
1.5
C
D
V
F
pF
mVdc
−
−
−
−
−
715
855
1000
1250
6.0
t
rr
ns
820
W
+10 V
2.0 k
100
mH
0.1
mF
D.U.T.
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAV70DXV6T5G
Curves Applicable to Each Anode
100
IF, FORWARD CURRENT (mA)
IR , REVERSE CURRENT (μA)
10
T
A
= 150°C
T
A
= 85°C
10
T
A
= - 40°C
1.0
T
A
= 125°C
T
A
= 85°C
0.1
T
A
= 55°C
0.01
T
A
= 25°C
1.0
T
A
= 25°C
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
Figure 2. Forward Voltage
1.0
CD, DIODE CAPACITANCE (pF)
Figure 3. Leakage Current
0.9
0.8
0.7
0.6
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
BAV70DXV6T5G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
D
−X−
6
5
4
A
L
1
2
3
E
−Y−
b
H
E
e
5
6 PL
M
C
X Y
0.08 (0.003)
DIM
A
b
C
D
E
e
L
H
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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