Freescale Semiconductor
Technical Data
Document Number: MWE6IC9080N
Rev. 0, 4/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip
matching that makes it usable from 865 to 960 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ1
= 230 mA, I
DQ2
=
630 mA, P
out
= 80 Watts CW
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
29.0
28.8
28.5
PAE
(%)
49.7
51.6
52.3
MWE6IC9080NR1
MWE6IC9080GNR1
MWE6IC9080NBR1
865-
-960 MHz, 80 W CW, 28 V
GSM, GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, P
out
= 128 Watts CW
(3 dB Input Overdrive from Rated P
out
), Designed for Enhanced Ruggedness
•
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW
P
out
•
Typical P
out
@ 1 dB Compression Point
≃
90 Watts CW
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 230 mA, I
DQ2
=
630 mA, P
out
= 35 Watts Avg.
G
ps
(dB)
30.0
30.0
29.5
PAE
(%)
37.0
37.8
38.0
SR1
@ 400 kHz
(dBc)
--62
--62
--62
SR2
@ 600 kHz
(dBc)
--75
--75
--75
EVM
(% rms)
0.8
1.2
1.5
CASE 1618-
-02
TO-
-270 WB-
-14
PLASTIC
MWE6IC9080NR1
CASE 1621-
-02
TO-
-270 WB-
-14 GULL
PLASTIC
MWE6IC9080GNR1
Frequency
920 MHz
940 MHz
960 MHz
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
•
On--Chip Matching (50 Ohm Input, DC Blocked)
•
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
DS1
V
GS2
V
GS1
RF
in
RF
out
/V
DS2
CASE 1617-
-02
TO-
-272 WB-
-14
PLASTIC
MWE6IC9080NBR1
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
NC
V
DS1
V
GS2
V
GS1
NC
RF
in
RF
in
NC
V
GS1
V
GS2
V
DS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14
RF
out
/V
DS2
13
RF
out
/V
DS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
in
Value
--0.5, +66
--0.5, +6
--65 to +150
150
225
20.5
Unit
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
GSM Application
(Case Temperature 80°C,
P
out
= 80 W CW, 940 MHz)
GSM EDGE Application
(Case Temperature 80°C,
P
out
= 40 W CW, 940 MHz)
Symbol
R
θJC
Stage 1, 28 Vdc, I
DQ1
= 230 mA
Stage 2, 28 Vdc, I
DQ2
= 630 mA
Stage 1, 28 Vdc, I
DQ1
= 230 mA
Stage 2, 28 Vdc, I
DQ2
= 630 mA
3.5
0.52
Value
(2,3)
Unit
°C/W
3.6
0.54
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 33
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1
= 230 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1
= 230 mAdc, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.5
—
15
2
2.7
17
3.5
—
19
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 270
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2
= 630 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2
= 630 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Power Gain
Power Added Efficiency
Input Return Loss
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.5
—
16.5
0.1
2
2.7
18.5
0.45
3.5
—
20.5
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 80 W CW, I
DQ1
= 230 mA, I
DQ2
= 630 mA, f = 960 MHz
G
ps
PAE
IRL
27.0
48.0
—
28.5
52.3
--28
30.5
—
--10
dB
%
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 80 W CW, I
DQ1
= 230 mA,
I
DQ2
= 630 mA
Frequency
920 MHz
940 MHz
960 MHz
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 100 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
(2)
with 4.12 kΩ Gate Feed Resistors (--30 to 85°C)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 80 W CW
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Stage 1
Stage 2
Symbol
P1dB
IMD
sym
G
ps
(dB)
29.0
28.8
28.5
Min
—
—
PAE
(%)
49.7
51.6
52.3
Typ
90
28
Max
—
—
IRL
(dB)
--24
--28
--28
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 230 mA, I
DQ2
= 630 mA, 920--960 MHz Bandwidth
VBW
res
∆I
QT
—
—
30
—
—
MHz
%
2.6
2.6
—
—
—
0.7
0.039
0.008
—
—
—
dB
dB/°C
dBm/°C
G
F
∆G
∆P1dB
1. Part internally matched both on input and output.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
(continued)
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 35 W Avg., I
DQ1
=
230 mA, I
DQ2
= 630 mA, 920--960 MHz EDGE Modulation
G
ps
(dB)
30.0
30.0
29.5
PAE
(%)
37.0
37.8
38.0
SR1
@ 400 kHz
(dBc)
--62
--62
--62
SR2
@ 600 kHz
(dBc)
--75
--75
--75
EVM
(% rms)
0.8
1.2
1.5
Frequency
920 MHz
940 MHz
960 MHz
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
4
RF Device Data
Freescale Semiconductor
V
DS1
C17
C22
C7
C8
V
DS2
C11
MWE6IC9080N
Rev. 2
C20
C1
C3
C24
C23
C14
CUT OUT AREA
C13
R1
V
GS1
C16
R2
V
GS2
C18
V
DS1
*C6 is mounted vertically.
C12
C19
C2
C4
C5
C6
C25
C15
C21
V
DS2
C10
C9
Figure 3. MWE6IC9080NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MWE6IC9080NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
C1, C2
C3, C4
C5, C7, C8, C9, C10, C11, C12,
C13, C14
C6
C15, C16, C17, C18, C19, C20,
C21
C22, C23
C24
C25
R1, R2
PCB
Description
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4.12 KΩ, 1/4 W Chip Resistors
0.030″,
ε
r
= 2.8
Part Number
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Manufacturer
ATC
ATC
ATC
ATC
Murata
Multicomp
ATC
ATC
Vishay
Isola
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
5
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