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MWE6IC9080NBR1

Description
RF amplifier hv6e 900mhz to272wb14
CategoryTopical application    Wireless rf/communication   
File Size721KB,19 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance  
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MWE6IC9080NBR1 Overview

RF amplifier hv6e 900mhz to272wb14

Freescale Semiconductor
Technical Data
Document Number: MWE6IC9080N
Rev. 0, 4/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip
matching that makes it usable from 865 to 960 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Typical GSM Performance: V
DD
= 28 Volts, I
DQ1
= 230 mA, I
DQ2
=
630 mA, P
out
= 80 Watts CW
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
29.0
28.8
28.5
PAE
(%)
49.7
51.6
52.3
MWE6IC9080NR1
MWE6IC9080GNR1
MWE6IC9080NBR1
865-
-960 MHz, 80 W CW, 28 V
GSM, GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, P
out
= 128 Watts CW
(3 dB Input Overdrive from Rated P
out
), Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW
P
out
Typical P
out
@ 1 dB Compression Point
90 Watts CW
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 230 mA, I
DQ2
=
630 mA, P
out
= 35 Watts Avg.
G
ps
(dB)
30.0
30.0
29.5
PAE
(%)
37.0
37.8
38.0
SR1
@ 400 kHz
(dBc)
--62
--62
--62
SR2
@ 600 kHz
(dBc)
--75
--75
--75
EVM
(% rms)
0.8
1.2
1.5
CASE 1618-
-02
TO-
-270 WB-
-14
PLASTIC
MWE6IC9080NR1
CASE 1621-
-02
TO-
-270 WB-
-14 GULL
PLASTIC
MWE6IC9080GNR1
Frequency
920 MHz
940 MHz
960 MHz
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
(1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
DS1
V
GS2
V
GS1
RF
in
RF
out
/V
DS2
CASE 1617-
-02
TO-
-272 WB-
-14
PLASTIC
MWE6IC9080NBR1
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
NC
V
DS1
V
GS2
V
GS1
NC
RF
in
RF
in
NC
V
GS1
V
GS2
V
DS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14
RF
out
/V
DS2
13
RF
out
/V
DS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
1
RF Device Data
Freescale Semiconductor

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