FD120U04A5P datasheet, PDF - EEWORLD Datasheet

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FD120U04A5P: DescriptionRectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER; CategoryDiscrete semiconductor diode; File Size145KB，3 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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FD120U04A5P Overview

Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER

FD120U04A5P Parametric

Parameter Name	Attribute value
Parts packaging code	WAFER
package instruction	S-XUUC-N1
Contacts	1
Reach Compliance Code	unknown
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	S-XUUC-N1
Number of components	1
Phase	1
Number of terminals	1
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Certification status	Not Qualified
Maximum reverse recovery time	0.046 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Base Number Matches	1

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I - 0524J

rev.A

FD120U04A5B

FRED Die in Wafer Form

100% Tested at Probe

Available in Tape and Reel (upon request),

Chip Pack, and Sawn on Film

Electrical Characteristics

Parameter

RRM

Description

Maximum Forward Voltage

Minimum Reverse Breakdown Voltage

Max. Reverse Leakage Current

Typ. Reverse Recovery Time

Min

–––

400V

–––

Typ

–––

46ns

Max

1.25V

–––

50µA

–––

Test Conditions

= 25°C, I

= 15A

= 25°C, I

RRM

= 100µA

= 25°C, V

RRM

= 400V

= 15A, di/dt = 200A/µs, V

= 200V

400V

= 1.25V

(max.)

5" Wafer

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer Thickness:

Scribe Line Width

Reject Ink Dot Size

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Package

Cr-Ni-Ag ( 1kA-2kA-3kA)

99%Al, 1%Si (3µm)

0.120" x 0.120" (see drawing)

125 mm

14 mils

56 ±10 µm

0.25 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

30CPU04

Die Outline

40 (1.57)

Wafer flat alligned with

side b of the die

NOTES:

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).

0.35 ± 0.01

(14 ± 0.4)

2. CONTROLLING DIMENSION (INCH):

3. DIMENSIONS AND TOLERANCES:

a = 3.05 +0, - 0.01

(120 +0, - 0.4)

b = 3.05 +0, - 0.01

(120 +0, - 0.4)

c = 2.61 +0, - 0.01

(102.8 +0, - 0.4)

d = 2.61 +0, - 0.01

(102.8 +0, - 0.4)

4. LETTER DESIGNATION:

A = Anode (Top Metal)

C = Cathode (Back Metal)

Ø 125 (4.92)

5. SAWING:

Recommended Blade

SEMITEC S1025 QS00 Blade

Note:

The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

Part number shown is for die in waveform. Contact factory for these other options.

Document Number: 93774

09/08/06

www.vishay.com

FD120U04A5P Related Products

	FD120U04A5P	FD120U04A5F	FD120U04A5B	FD120U04A5R
Description	Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER	Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER	Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, 5 INCH, WAFER	Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER
Parts packaging code	WAFER	WAFER	WAFER	WAFER
package instruction	S-XUUC-N1	5 INCH, WAFER	S-XUUC-N1	S-XUUC-N1
Contacts	1	1	1	1
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	CATHODE	CATHODE	CATHODE	CATHODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	S-XUUC-N1	S-XUUC-N1	S-XUUC-N1	S-XUUC-N1
Number of components	1	1	1	1
Phase	1	1	1	1
Number of terminals	1	1	1	1
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum reverse recovery time	0.046 µs	0.046 µs	0.046 µs	0.046 µs
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER
Base Number Matches	1	1	1	1

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