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FD120U04A5R

Description
Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER
CategoryDiscrete semiconductor    diode   
File Size145KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

FD120U04A5R Overview

Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER

FD120U04A5R Parametric

Parameter NameAttribute value
Parts packaging codeWAFER
package instructionS-XUUC-N1
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeS-XUUC-N1
Number of components1
Phase1
Number of terminals1
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Certification statusNot Qualified
Maximum reverse recovery time0.046 µs
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Base Number Matches1
I - 0524J
rev.A
FD120U04A5B
FRED Die in Wafer Form
100% Tested at Probe
Available in Tape and Reel (upon request),
Chip Pack, and Sawn on Film
Electrical Characteristics
Parameter
V
FM
V
RRM
I
RM
t
rr
Description
Maximum Forward Voltage
Minimum Reverse Breakdown Voltage
Max. Reverse Leakage Current
Typ. Reverse Recovery Time
Min
–––
400V
–––
–––
Typ
–––
–––
–––
46ns
Max
1.25V
–––
50µA
–––
Test Conditions
T
J
= 25°C, I
F
= 15A
T
J
= 25°C, I
RRM
= 100µA
T
J
= 25°C, V
RRM
= 400V
I
F
= 15A, di/dt = 200A/µs, V
R
= 200V
400V
V
F
= 1.25V
(max.)
5" Wafer
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Scribe Line Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Reference Package
Cr-Ni-Ag ( 1kA-2kA-3kA)
99%Al, 1%Si (3µm)
0.120" x 0.120" (see drawing)
125 mm
14 mils
56 ±10 µm
0.25 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
30CPU04
Die Outline
40 (1.57)
Wafer flat alligned with
side b of the die
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).
a
c
0.35 ± 0.01
(14 ± 0.4)
2. CONTROLLING DIMENSION (INCH):
3. DIMENSIONS AND TOLERANCES:
a = 3.05 +0, - 0.01
(120 +0, - 0.4)
b = 3.05 +0, - 0.01
(120 +0, - 0.4)
c = 2.61 +0, - 0.01
(102.8 +0, - 0.4)
d = 2.61 +0, - 0.01
(102.8 +0, - 0.4)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
C
b
d
A
Ø 125 (4.92)
5. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
Note:
The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which
are available upon request.
Part number shown is for die in waveform. Contact factory for these other options.
Document Number: 93774
09/08/06
www.vishay.com
1

FD120U04A5R Related Products

FD120U04A5R FD120U04A5P FD120U04A5F FD120U04A5B
Description Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, 5 INCH, WAFER
Parts packaging code WAFER WAFER WAFER WAFER
package instruction S-XUUC-N1 S-XUUC-N1 5 INCH, WAFER S-XUUC-N1
Contacts 1 1 1 1
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code S-XUUC-N1 S-XUUC-N1 S-XUUC-N1 S-XUUC-N1
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 1 1 1 1
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE SQUARE SQUARE
Package form UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse recovery time 0.046 µs 0.046 µs 0.046 µs 0.046 µs
surface mount YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER UPPER
Base Number Matches 1 1 1 1
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