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FMV24N25G
Super FAP-G series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
TO-220F(SLS)
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Isolation
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
dVds/dt
dV/dt
P
D
T
ch
T
stg
V
ISO
Characteristics
250
220
±24
±96
±30
24
192
20
5
2.16
65
150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
KVrms
Remarks
V
GS
= -30V
Note*1
Note*2
VDS=≤200V
Note*3
Ta=25°C
Tc=25°C
t=60sec, f=60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified) Static Ratings
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BV
DSS
V
GS
(th)
I
DSS
I
GSS
R
DS
(on)
g
fs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
G
Q
GS
Q
GD
I
AV
V
SD
trr
Qrr
Conditions
I
D
=250µA, V
GS
=0V
I
D
=250µA, V
DS
=V
GS
V
DS
=250V, V
GS
=0V
V
DS
=200V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
I
D
=12A, V
GS
=10V
I
D
=12A, V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
cc
=72V
V
GS
=10V
I
D
=12A
R
G
=10Ω
V
cc
=72V
I
D
=24A
V
GS
=10V
L=560uH, T
ch
=25°C
I
F
=24A, V
GS
=0V, T
ch
=25°C
I
F
=24A, V
GS
=0V
-di/dt=100A/µs, Tch=25°C
min.
250
3.0
-
-
-
-
8
-
-
-
-
-
-
-
-
-
-
24
-
-
-
typ.
-
-
-
-
10
0.11
16
1150
200
13
27
22
35
14
36
14.5
11.5
-
1.0
0.23
2.5
max.
-
5.0
25
250
100
0.13
-
1725
300
19.5
40.5
33
52.5
21
54
21.8
17.3
-
1.5
-
-
Unit
V
V
µA
nA
Ω
S
pF
T
ch
=25°C
T
ch
=125°C
ns
nC
A
V
µS
µC
Thermal Characteristics
Description
Channel to Case
Channel to Ambient
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, I
AS
=A, L=560uH, Vcc=48V, R
G
=50Ω,
E
AS
limited by maximum channel temperature and avalanche current.
Note *3 : I
F
≤-I
D
, -di/dt=50A/µs, Vcc≤BV
DSS
, Tch≤150°C.
Symbol
Rth (ch-c)
Rth (ch-a)
min.
typ.
max.
1.923
58.0
Unit
°C/W
°C/W
1
FMV24N25G
AllowablePowerDissipation
PD=f(Tc)
FUJI POWER MOSFET
http://www.fujisemi.com
80
70
50
Typical Output Characteristics
ID=f(VDS):80µs pulse test, Tch=25˚C
20V
10V
8.0V
40
60
50
PD [W]
30
ID [A]
7.5V
40
30
20
20
7.0V
10
10
0
0
25
50
75
Tc [
˚
C]
100
125
150
0
0
2
4
VDS [V]
6
8
6.5V
VGS=6.0V
10
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C
Typical Transconductance
gfs=f(ID):80 µs pulse test, VDS=25V, Tch=25˚C
10
10
ID[A]
1
gfs[S]
1
0.1
0
1
2
3
4
5
VGS[V]
6
7
8
9
10
0.1
0.1
1
ID [A]
10
0.30
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25˚C
VGS=6.0V
6.5V
7.0V
0.4
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.0A, VGS=10V
0.25
0.3
RDS(on) [
Ω
]
7.5V
0.20
8.0V
0.15
RDS(on) [
Ω
]
0.2
max.
10V
20V
0.1
typ.
0.10
0.0
-50
-25
0
25
50
Tch [
˚
C]
75
100
125
150
10
20
ID [A]
30
40
2
FMV24N25G
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS, ID=250µA
7.0
6.5
6.0
5.5
5.0
VGS(th) [V]
FUJI POWER MOSFET
http://www.fujisemi.com
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=24.0A, Tch=25˚C
12
max.
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
Tch [
˚
C]
100
125
150
0
0
10
20
2
4
VGS [V]
Vcc=72V
8
min.
6
30
Qg [nC]
40
50
Typical Capacitance
C=f(VDS):VGS=0V, f=1MHz
10
4
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µspulsetest, Tch=25˚C
100
10
3
Ciss
10
Coss
C [pF]
10
2
IF [A]
1
10
1
Crss
10
0
10
-1
10
0
10
VDS [V]
1
10
2
0.1
0.00
0.25
0.50
0.75
1.00
VSD [V]
1.25
1.50
1.75
2.00
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
600
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(startingTch):Vcc=48V, I(AV)<=24.0A
tf
10
2
500
I
AS
=24.0A
td(off)
400
td(on)
EAV [mJ]
I
AS
=14.4A
300
t [ns]
tr
10
1
200
I
AS
=9.6A
100
10
0
0
10
-1
10
0
10
1
0
25
50
75
starting Tch [
˚
C]
100
125
150
ID [A]
3
FMV24N25G
FUJI POWER MOSFET
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment
• Electrical home appliances
• Personal equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
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• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Systems Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Systems Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Systems Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Systems Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
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