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TLP109(IGM,E)

Description
high speed optocouplers photo-IC -0.5 to 30v 3750 vrms 800ns
Categorysemiconductor    Other integrated circuit (IC)   
File Size256KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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TLP109(IGM,E) Overview

high speed optocouplers photo-IC -0.5 to 30v 3750 vrms 800ns

TLP109
TOSHIBA Photocoupler
GaAℓAs Ired & Photo
IC
TLP109
Programmable Controllers
Industrial Inverters
Switching Power Supplies
The Toshiba TLP109 mini-flat coupler is a small-outline coupler suitable
for surface-mount assembly.
The TLP109 consists of a high-output-power GaAℓAs light emitting diode
optically coupled to a high-speed photodiode-transistor chip.
The TLP109 is housed in the SO6 package and guarantees a creepage
distance of
5.0 mm, a clearance of
5.0 mm and an insulation thickness
of
0.4 mm. Therefore, the TLP109 meets the reinforced insulation class
requirements of international safety standards.
Unit: mm
6
5
4
1
3
3.7
-0.15
+0.25
4.55
+0.25
-0.15
7.0
±
0.4
0.1 2.1
±
0.1
0.15
0.4
1.27
0.5 min
Isolation voltage: 3750 Vrms (min)
Switching speed: t
p
HL
= 0.8
μs,
t
p
LH
= 0.8
μs
(max)
@R
L
= 1.9 kΩ
TTL-compatible
UL approved :UL1577, File No.E67349
c-UL approved :CSA Component Acceptance Service No. 5A, File No.E67349
Option (V4)
VDE approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 707V
PK
Highest Permissible Over Voltage
Please designate “Option(V4)”
: 6000V
PK
(Note) : When a EN60747-5-2 approved type is needed,
2.54
TOSHIBA
11-4L1
Weight: 0.08 g (Typ.)
Pin Configuration (Top View)
Schematic
I
F
I
CC
I
O
6
5
SHIELD
4
V
CC
V
O
GND
1
V
F
3
1: ANODE
3: CATHODE
4: EMITTER (GN D)
5: COLLECTOR (OUTPUT)
6: V
CC
Construction Mechanical Ratings
Creepage distance:
5.0 mm (min)
Clearance:
5.0 mm (min)
Insulation thickness:
0.4 mm (min)
1
2010-08-24

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