FLK017XP datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> FLK017XP

FLK017XP: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4; CategoryDiscrete semiconductor The transistor; File Size178KB，4 Pages; ManufacturerSUMITOMO; Websitehttps://global-sei.com/; Environmental Compliance

Download Datasheet Parametric View All

FLK017XP Overview

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4

FLK017XP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SUMITOMO
Parts packaging code	DIE
package instruction	UNCASED CHIP, R-XUUC-N4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
FET technology	HIGH ELECTRON MOBILITY
highest frequency band	KU BAND
JESD-30 code	R-XUUC-N4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

Preview

Download Datasheet

View All

FLK017XP

GaAs FET & HEMT Chips

FEATURES

•

High Output Power: P1dB = 20.5dBm(Typ.)

High Gain: G1dB = 8.0dB(Typ.)

High PAE:

add = 26%(Typ.)

Proven Reliability

Source

Gate

Drain

DESCRIPTION

The FLK017XP chip is a power GaAs FET that is designed for

general purpose applications in the Ku-Band frequency range as it

provides superior power, gain, and efficiency.

Eudyna

stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Symbol

VDS

VGS

Ptot

Tstg

Tch

Condition

Source

Rating

-5

Unit

°C

Tc = 25°C

1.15

-65 to +175

175

Eudyna

recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDS) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with

gate resistance of 3000Ω.

3. The operating channel temperature (Tch) should not exceed 145°C.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Item

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Noise Figure

Associated Gain

Maximum Availble Gain

Thermal Resistance

Symbol

IDSS

VGSO

P1dB

G1dB

add

Gas

Ga(max)

Rth

Test Conditions

VDS = 5V, VGS = 0V

VDS = 5V, IDS = 40mA

VDS = 5V, IDS = 3mA

IGS = -3µA

VDS = 10V

IDS

≈

0.6 IDSS

f = 14.5GHz

VDS = 3V

IDS = 20mA

f = 12GHz

VDS = 10V

IDS = 36mA

f = 12GHz

Channel to Case

Min.

-1.0

-5

19.5

7.0

Limit

Typ. Max.

-2.0

20.5

8.0

2.5

-3.5

130

Unit

dBm

°C/W

Note:

RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)

The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.

G.C.P.: Gain Compression Point

Edition 1.3

July 1999

Recommended Resources

touch circuit

Digital display temperature detection circuit

Thermostatic control circuit three using 555 time base integrated circuit

U-shaped fluorescent lamp wiring a

Heart rate monitoring circuit

450HZ signal generator

I would like to ask if there are any engineers here who use FPGA to develop fields other than communications?: There are some things I want to discuss...; 凯哥 FPGA/CPLD

The problem of flickering when adjusting thyristor dimming lamp: Using PIC16F630 to control the infrared signal reception and decode with external interrupt When pressing a button, the remote control sends codes continuously (108MS), and there is a short blackout i...; csm1987 Microchip MCU

Upload a classic SOC design tutorial (written by the chief engineer of ZTE Microelectronics Research Institute).rar: This is a nice tutorial!...; zjddxl Embedded System

The development history and working principle of Siemens servo motors: Development History The IFT5 series of three-phase permanent magnet AC Siemens servo motors of Siemens of Germany are divided into two categories: standard type and short type, with a total of 8 frame...; defanzikong Industrial Control Electronics

What is the highest frequency of the raw signal from the fence vibration system?: I am a newbie, and I am working on a perimeter security system. I need to use an accelerometer to collect the vibration frequency of the fence. The vibration of the fence is caused by human climbing, ...; pydacheng Analog electronics

Egg sticker, please ignore it.: Egg sticker, please ignore it....; yangyun Embedded System

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components