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7164S20TP

Description
Standard SRAM, 8KX8, 19ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size113KB,11 Pages
ManufacturerIDT (Integrated Device Technology)
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7164S20TP Overview

Standard SRAM, 8KX8, 19ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

7164S20TP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeDIP
package instruction0.300 INCH, PLASTIC, DIP-28
Contacts28
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time19 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T28
JESD-609 codee0
length34.671 mm
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Maximum seat height4.572 mm
Maximum standby current0.015 A
Minimum standby current4.5 V
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width7.62 mm
Base Number Matches1
CMOS Static RAM
64K (8K x 8-Bit)
Features
High-speed address/chip select access time
– Military: 20/25/35/45/55/70/85/100ns (max.)
– Industrial: 25/35ns (max.)
– Commercial: 15/20/25/35ns (max.)
Low power consumption
Battery backup operation – 2V data retention voltage
(L Version only)
Produced with advanced CMOS high-performance
technology
Inputs and outputs directly TTL-compatible
Three-state outputs
Available in 28-pin DIP, CERDIP and SOJ
Military product compliant to MIL-STD-883, Class B
IDT7164S
IDT7164L
x
Description
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K
x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS
technology.
Address access times as fast as 15ns are available and the circuit
offers a reduced power standby mode. When
CS
1
goes HIGH or CS
2
goes LOW, the circuit will automatically go to, and remain in, a low-
power stand by mode. The low-power (L) version also offers a battery
backup data retention capability at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible and
operation is from a single 5V supply, simplifying system designs. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-
pin 600 mil CERDIP.
Military grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.
x
x
x
x
x
x
x
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
65,536 BIT
MEMORY ARRAY
GND
A
12
0
7
I/O
0
I/O CONTROL
I/O
7
CS
1
CS
2
OE
WE
CONTROL
LOGIC
2967 drw 01
DECEMBER 2001
1
©2000 Integrated Device Technology, Inc.
DSC-2967/11

7164S20TP Related Products

7164S20TP IDT7164L15YG8 7164L25YI 7164L25YI8 7164L20Y 7164L20Y8 7164S20Y 7164S20Y8 7164L20TP
Description Standard SRAM, 8KX8, 19ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 Standard SRAM, 8KX8, 15ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Standard SRAM, 8KX8, 25ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 8KX8, 25ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 8KX8, 19ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Standard SRAM, 8KX8, 19ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Standard SRAM, 8KX8, 19ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Standard SRAM, 8KX8, 19ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Standard SRAM, 8KX8, 19ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
Is it Rohs certified? incompatible conform to incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Parts packaging code DIP SOJ SOJ SOJ SOJ SOJ SOJ SOJ DIP
package instruction 0.300 INCH, PLASTIC, DIP-28 0.300 INCH, SOJ-28 0.300 INCH, PLASTIC, SOJ-28 0.300 INCH, PLASTIC, SOJ-28 0.300 INCH, SOJ-28 0.300 INCH, SOJ-28 0.300 INCH, SOJ-28 0.300 INCH, SOJ-28 0.300 INCH, PLASTIC, DIP-28
Contacts 28 28 28 28 28 28 28 28 28
Reach Compliance Code not_compliant unknown not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 19 ns 15 ns 25 ns 25 ns 19 ns 19 ns 19 ns 19 ns 19 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDIP-T28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDIP-T28
JESD-609 code e0 e3 e0 e0 e0 e0 e0 e0 e0
length 34.671 mm 17.9324 mm 17.9324 mm 17.9324 mm 17.9324 mm 17.9324 mm 17.9324 mm 17.9324 mm 34.671 mm
memory density 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1 1 1
Number of terminals 28 28 28 28 28 28 28 28 28
word count 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words
character code 8000 8000 8000 8000 8000 8000 8000 8000 8000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 85 °C 85 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 8KX8 8KX8 8KX8 8KX8 8KX8 8KX8 8KX8 8KX8 8KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP SOJ SOJ SOJ SOJ SOJ SOJ SOJ DIP
Encapsulate equivalent code DIP28,.3 SOJ28,.34 SOJ28,.34 SOJ28,.34 SOJ28,.34 SOJ28,.34 SOJ28,.34 SOJ28,.34 DIP28,.3
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 260 225 225 225 225 225 225 225
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 4.572 mm 3.556 mm 3.556 mm 3.556 mm 3.556 mm 3.556 mm 3.556 mm 3.556 mm 4.572 mm
Maximum standby current 0.015 A 0.00006 A 0.00006 A 0.00006 A 0.00006 A 0.00006 A 0.015 A 0.015 A 0.00006 A
Minimum standby current 4.5 V 2 V 2 V 2 V 2 V 2 V 4.5 V 4.5 V 2 V
Maximum slew rate 0.17 mA 0.1 mA 0.15 mA 0.15 mA 0.15 mA 0.15 mA 0.17 mA 0.17 mA 0.15 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO YES YES YES YES YES YES YES NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn85Pb15) Matte Tin (Sn) - annealed Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
Terminal form THROUGH-HOLE J BEND J BEND J BEND J BEND J BEND J BEND J BEND THROUGH-HOLE
Terminal pitch 2.54 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30 30 30 30 30 30
width 7.62 mm 7.5184 mm 7.5184 mm 7.5184 mm 7.5184 mm 7.5184 mm 7.5184 mm 7.5184 mm 7.62 mm
Base Number Matches 1 1 1 1 1 1 - - -
Humidity sensitivity level - 3 3 3 3 3 3 3 -
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