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5A800

Description
Rectifier Diode, 1 Element, 5A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size44KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

5A800 Overview

Rectifier Diode, 1 Element, 5A, 800V V(RRM),

5A800 Parametric

Parameter NameAttribute value
JESD-30 codeO-PALF-W2
JEDEC-95 codeDO-27
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Terminal formWIRE
Terminal locationAXIAL
Number of terminals2
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)260
Is it Rohs certified?Yes
YTEOL0
Objectid104457067
Reach Compliance CodeUnknown
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Maximum non-repetitive peak forward current300 A
Phase1
Maximum repetitive peak reverse voltage800 V
surface mountNO
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
Number of components1
Maximum output current5 A
BL
FEATURES
Low leakage
GALAXY ELECTRICAL
5A50 - - - 5A1000
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 5.0 A
PLASTIC SILICON RECTIFIER
Low cost
Diffused junction
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 27
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
5A
50
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
5A
100
100
70
100
5A
200
200
140
200
5A
400
400
280
400
5.0
5A
600
600
420
600
5A
800
800
560
800
5A
1000
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
300.0
A
Maximum instantaneous forw ard voltage
@ 5.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.2
10.0
100.0
80
15
- 55 ---- + 150
- 55 ---- + 150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
2. Thermal resistance f rom junction to ambient.
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
www.galaxycn.com
Document Number 0260012
BL
GALAXY ELECTRICAL
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