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BBY56-02WE6327

Description
Variable Capacitance Diode, 40pF C(T), 10V, Silicon, ROHS COMPLIANT, SCD-80, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size879KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BBY56-02WE6327 Overview

Variable Capacitance Diode, 40pF C(T), 10V, Silicon, ROHS COMPLIANT, SCD-80, 2 PIN

BBY56-02WE6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage10 V
ConfigurationSINGLE
Diode Capacitance Tolerance7.5%
Minimum diode capacitance ratio2.15
Nominal diode capacitance40 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BBY56...
Silicon Tuning Diode
Excellent linearity
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread
Pb-free (RoHS compliant) package
BBY56-02V
BBY56-02W
BBY56-03W

Type
BBY56-02V
BBY56-02W*
BBY56-03W
* Not for new design
Package
SC79
SCD80
SOD323
Configuration
single
single
single
Marking
9
66
red 6
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
V
R
I
F
T
op
T
Stg
Value
10
20
-55 ...150
-55 ...150
Unit
V
mA
°C
1
2014-02-11

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