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DLSF14

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size62KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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DLSF14 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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DLSF11
THRU
DLSF18
1 Amp Glass
Passivated Super Fast
Recovery Rectifier
50 to 600 Volts
MELF
Cathode Mark
High Surge Capability
Low Leakage
Low Forward Voltage Drop
High Current Capability
Super Fast Switching Speed For High Efficiency
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
MST
Catalog
Number
DLSF11
DLSF12
DLSF13
DLSF14
DLSF15
DLSF16
DLSF18
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
300V
400V
600V
Maximum
RMS
Voltage
35V
70V
105V
140V
210V
280V
420V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
300V
400V
600V
DIM
A
B
C
INCHES
MIN
.190
---
.095
C
---
---
---
---
---
---
---
B
A
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1A
T
A
= 55°C
Current
Peak Forward Surge
I
FSM
30A
8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
.975V I
FM
= 1.0A;
DLSF11-DLSF15
V
F
1.25V T
A
= 25°C
DLSF16-DLSF18
Maximum DC
Reverse Current At
I
R
5µA
T
A
= 25°C
Rated DC Blocking
50µA
T
A
= 150°C
Voltage
Maximum Reverse
T
rr
35ns
I
F
=0.5A, I
R
=1.0A,
50ns
Recovery Time
16-18
I
rr
=0.25A
Typical Junction
Capacitance
15pF
Measured at
DLSF11-DLSF15
C
J
10pF
1.0MHz, V
R
=4.0V
DLSF16-DLSF18
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
DIMENSIONS
MM
MIN
4.80
---
2.40
MAX
.205
.022
.099
MAX
5.20
.55
2.50
NOTE
Nominal
SUGGESTED SOLDER
PAD LAYOUT
.100”
.045”
.026”
www.mccsemi.com

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Description 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 150 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 300 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE
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