EEPROM, 8KX8, 200ns, Parallel, NMOS, CDIP28, SIDE BRAZED, CERAMIC, DIP-28
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | AMD |
| Parts packaging code | DIP |
| package instruction | DIP, DIP28,.6 |
| Contacts | 28 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 200 ns |
| command user interface | NO |
| Data polling | YES |
| JESD-30 code | R-CDIP-T28 |
| JESD-609 code | e0 |
| length | 35.56 mm |
| memory density | 65536 bit |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 28 |
| word count | 8192 words |
| character code | 8000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 8KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| page size | 32 words |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Programming voltage | 5 V |
| Certification status | Not Qualified |
| Maximum seat height | 4.445 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | NMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| switch bit | NO |
| width | 15.24 mm |
| Maximum write cycle time (tWC) | 10 ms |
| Base Number Matches | 1 |
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