P200PH03EH0 datasheet, PDF - EEWORLD Datasheet

P200PH03EH0: DescriptionSilicon Controlled Rectifier, 355000mA I(T), 300V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size849KB，6 Pages; ManufacturerIXYS

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P200PH03EH0 Overview

Silicon Controlled Rectifier, 355000mA I(T), 300V V(DRM),

Parameter Name	Attribute value
ECCN code	EAR99
Is Samacsys	N
Objectid	113836758
package instruction	,
Reach Compliance Code	Compliant
Nominal circuit commutation break time	30 µs
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger voltage	3 V
On-state non-repetitive peak current	2700 A
Trigger device type	SCR
Maximum leakage current	30 mA
Maximum on-state voltage	2.34 V
On-state Current-Max	355000 A
Off-state repetitive peak voltage	300 V
Maximum DC gate trigger current	200 mA
Maximum holding current	600 mA
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
surface mount	NO

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