EEWORLDEEWORLDEEWORLD

Part Number

Search

BCR583E6433

Description
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size102KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCR583E6433 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

BCR583E6433 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.33 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1

BCR583E6433 Related Products

BCR583E6433
Description Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Is it Rohs certified? conform to
Reach Compliance Code compliant
ECCN code EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.5 A
Collector-emitter maximum voltage 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 70
JESD-30 code R-PDSO-G3
JESD-609 code e3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type PNP
Maximum power dissipation(Abs) 0.33 W
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN
Terminal form GULL WING
Terminal location DUAL
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 150 MHz
Base Number Matches 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 277  459  1205  2206  668  6  10  25  45  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号