5962-01-239-0420 datasheet, PDF

5962-01-239-0420: DescriptionStandard SRAM, 2KX8, 90ns, CMOS, CQCC32; Categorystorage storage; File Size515KB，10 Pages; ManufacturerIDT (Integrated Device Technology)

Download Datasheet Parametric View All

5962-01-239-0420 Overview

Standard SRAM, 2KX8, 90ns, CMOS, CQCC32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
Maximum access time	90 ns
I/O type	COMMON
JESD-30 code	R-XQCC-N32
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	32
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	QCCN
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.0002 A
Minimum standby current	2 V
Maximum slew rate	0.085 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components