Rectifier Diode
| Parameter Name | Attribute value |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| YTEOL | 6.15 |
| Objectid | 8062535767 |
| Reach Compliance Code | Compliant |
| Country Of Origin | USA |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Phase | 1 |
| Reverse test voltage | 50 V |
| application | HIGH VOLTAGE ULTRA FAST RECOVERY |
| Maximum non-repetitive peak forward current | 25 A |
| Shell connection | ISOLATED |
| Number of terminals | 2 |
| Package body material | GLASS |
| Package shape | ELLIPTICAL |
| Package form | LONG FORM |
| Terminal form | WRAP AROUND |
| Terminal location | END |
| Diode component materials | SILICON |
| Maximum forward voltage (VF) | 13 V |
| Maximum output current | 0.5 A |
| Maximum repetitive peak reverse voltage | 10000 V |
| Maximum reverse recovery time | 0.07 µs |
| Configuration | SINGLE |
| Diode type | RECTIFIER DIODE |
| Number of components | 1 |
| Maximum reverse current | 1 µA |
| surface mount | YES |
| JESD-30 code | E-LELF-R2 |
| Guideline | MIL-19500 |
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