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BUK457-400A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size445KB,5 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric View All

BUK457-400A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK457-400A Parametric

Parameter NameAttribute value
Maximum operating temperature150 °C
Terminal surfaceTin/Lead (Sn/Pb)
Is it Rohs certified?No
Objectid101427234
package instruction,
Reach Compliance CodeUnknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Maximum drain current (ID)13 A
Number of components1
Polarity/channel typeN-CHANNEL
surface mountNO
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum power dissipation(Abs)150 W
JESD-609 codee0

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