Variable Capacitance Diode, 10pF C(T), 30V, Silicon, DO-7, GLASS PACKAGE-2
| Parameter Name | Attribute value |
| JEDEC-95 code | DO-7 |
| JESD-30 code | O-LALF-W2 |
| Certification status | Not Qualified |
| Objectid | 1992281636 |
| Parts packaging code | DO-7 |
| package instruction | O-LALF-W2 |
| Is Samacsys | N |
| YTEOL | 0 |
| Contacts | 2 |
| Reach Compliance Code | Unknown |
| ECCN code | EAR99 |
| Diode type | VARIABLE CAPACITANCE DIODE |
| surface mount | NO |
| Maximum power dissipation | 0.4 W |
| Maximum repetitive peak reverse voltage | 30 V |
| Minimum breakdown voltage | 30 V |
| Configuration | SINGLE |
| Nominal diode capacitance | 10 pF |
| Diode component materials | SILICON |
| Number of components | 1 |
| Terminal location | AXIAL |
| Shell connection | ISOLATED |
| Number of terminals | 2 |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Terminal form | WIRE |
| Diode Capacitance Tolerance | 5% |
| Minimum diode capacitance ratio | 2.8 |
| minimum quality factor | 550 |
| Varactor Diode Classification | ABRUPT |
京公网安备 11010802033920号
EEWORLD
