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BZT52C12S-7-F

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size492KB,3 Pages
ManufacturerSPC Multicomp
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BZT52C12S-7-F Overview

Zener Diode,

BZT52C12S-7-F Parametric

Parameter NameAttribute value
MakerSPC Multicomp
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Nominal reference voltage12 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum voltage tolerance5.39%
Working test current5 mA
Base Number Matches1
Surface Mount
Zener Diode
Features:
Planar Die Construction
General Purpose, Medium Current
Ideally Suited For Automated Assembly Processes
Applications:
Zener diode
Ultra-small surface mount package
SOD-323
Max. Rating @ T
a
= 25°C unless otherwise specified
Parameter
Forward voltage
Power dissipation
Thermal resistance junction to ambient air
Operating junction temperature range
Storage temperature range
@ I
f
= 10mA
Symbol
V
f
P
d
R
θJA
Tj
T
stg
Limits
0.9
200
625
150
-65 to +150
Unit
V
mW
°C/W
°C
°C
Notes
: Valid provided that device terminals are kept at ambient temperature
Short duration test pulse used in minimize self-heating effect
f = 1kHz
Electrical Characteristics @ T
a
= 25°C unless otherwise specified
Zener Voltage Range
Marking
Code
Nom(V)
WH
12
V
z
@ I
zt
Min(V)
11.4
Max(V)
12.7
I
zt
mA
5
25
Z
zt
@I
zt
Ω
150
Max. Zener
Impedance
Z
zk
@I
zk
I
zk
mA
1
Max. Reverse
Current
I
r
μA
0.1
@V
r
V
8
Typical
Temperature
Coefficient@
I
ztc
mV/°C
Min.
6
Max.
10
Note
: Valid provided that device terminals are kept at ambient temperature
Tested with pulses, period = 5ms, pulse width = 300μs
f = 1kHz
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