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1.5CE33CATIN/LEAD

Description
Trans Voltage Suppressor Diode,
CategoryDiscrete semiconductor    diode   
File Size397KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

1.5CE33CATIN/LEAD Overview

Trans Voltage Suppressor Diode,

1.5CE33CATIN/LEAD Parametric

Parameter NameAttribute value
YTEOL5.98
Objectid8315682581
Reach Compliance CodeNot Compliant
ECCN codeEAR99
Is SamacsysN
Maximum breakdown voltage34.7 V
Maximum non-repetitive peak reverse power dissipation1500 W
Reverse test voltage28.2 V
Maximum reverse current5 µA
surface mountNO
Minimum breakdown voltage31.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Number of components1
Maximum power dissipation5 W
technologyAVALANCHE
Breakdown voltage nominal value33 V
Maximum clamping voltage45.7 V
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage28.2 V
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Shell connectionISOLATED
Number of terminals2
JEDEC-95 codeDO-201
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Is it Rohs certified?No
1.5CE6.8A THRU 1.5CE440A
1.5CE6.8CA THRU 1.5CE440CA
UNI-DIRECTIONAL
AND BI-DIRECTIONAL
SILICON TRANSIENT
VOLTAGE SUPPRESSORS
1500 WATTS, 6.8 THRU 440 VOLTS
w w w. c e n t r a l s e m i . c o m
DO-201 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1.5CE6.8A (Uni-
Directional) and 1.5CE6.8CA (Bi-Directional) Series
types are Transient Voltage Suppressors designed to
protect voltage sensitive components from high voltage
transients.
THIS DEVICE IS MANUFACTURED WITH A GLASS
PASSIVATED CHIP FOR OPTIMUM RELIABILITY.
Note: For Uni-Directional devices add suffix “A” to part
number. For Bi-Directional devices add suffix “CA” to
part number.
MARKING: FULL PART NUMBER
Bi-directional devices shall not be
marked with a Cathode band.
MAXIMUM RATINGS:
(TL=25°C unless otherwise noted)
Peak Power Dissipation (Note 1)
Steady State Power Dissipation (TL=75°C, L.L.=3/8”)
Forward Surge Current (Uni-Directional only)
Operating and Storage Junction Temperature
SYMBOL
PPK
PD
IFSM
TJ, Tstg
MAXIMUM
REVERSE
LEAKAGE
CURRENT
IR @ VRWM
µA
1000
500
200
50
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1500
5.0
200
-65 to +175
UNITS
W
W
A
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
BREAKDOWN
VOLTAGE
TYPE
MIN
V
1.5CE6.8
1.5CE7.5
1.5CE8.2
1.5CE9.1
1.5CE10
1.5CE11
1.5CE12
1.5CE13
1.5CE15
1.5CE16
1.5CE18
1.5CE20
1.5CE22
1.5CE24
1.5CE27
1.5CE30
1.5CE33
1.5CE36
1.5CE39
1.5CE43
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
VBR @ IT
NOM
V
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
TEST
CURRENT
IT
MAX
V
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
mA
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
V
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
V
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
PEAK
PULSE
CURRENT
(Note 1)
IPP
A
143
132
124
112
103
96
90
82
71
67
59.5
54
49
45
40
36
33
30
28
25.3
MAXIMUM
TEMPERATURE
COEFFICIENT
ΘV
BR
% / °C
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
Notes: (1) Non-repetitive 10x1,000µs pulse.
R1 (8-September 2011)

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