WMS128K8-XXX
128Kx8 MONOLITHIC SRAM, SMD 5962-96691
FEATURES
Access Times 15, 17, 20, 25, 35, 45, 55ns
Revolutionary, Center Power/Ground Pinout JEDEC
Approved
• 32 lead Ceramic SOJ (Package 101)
• 36 lead Ceramic Flat Pack (Package 226)
Evolutionary, Corner Power/Ground Pinout JEDEC
Approved
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
• 32 lead Ceramic Flat Pack (Package 206)
This product is subject to change without notice.
32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
MIL-STD-883 Compliant Devices Available
Commercial, Industrial and Military Temperature Range
5 Volt Power Supply
Low Power CMOS
2V Data Retention Devices Available (Low Power Version)
TTL Compatible Inputs and Outputs
Revolutionary Pinout
32 DIP
Evolutionary Pinout
32 CSOJ (DE)
36 FLAT PACK
Top View
32 CSOJ (DR)
Top View
32 FLATPACK (FE)
Top View
32 CLCC
Top View
A12
A14
A16
A18
V
CC
A15
A17
4 3 2 1 32 31 30
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
14 15 16 17 18 19 20
I/O1
I/02
V
SS
I/O3
I/O4
I/O5
I/O6
WE#
A13
A8
A9
A11
OE#
A10
CS#
I/O7
NC
A0
A1
A2
A3
CS#
I/O0
I/O1
V
CC
GND
I/O2
I/O3
WE#
A4
A5
A6
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A16
A15
A14
A13
OE#
I/O7
I/O6
GND
V
CC
I/O5
I/O4
A12
A11
A10
A9
A8
NC
A0
A1
A2
A3
CS#
I/O1
I/O2
V
CC
GND
I/O3
I/O4
WE#
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE#
I/O8
I/O7
GND
V
CC
I/O6
I/O5
A12
A11
A10
A9
A8
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
NC
WE#
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
Pin Description
A
0-16
I/O
0-7
CS
OE
WE
V
CC
GND
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
V
CC
+0.5
150
7.0
Unit
°C
°C
V
°C
V
CS#
H
L
L
L
OE#
X
L
X
H
WE#
X
H
L
H
TRUTH TABLE
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
V
CC
+ 0.3
+0.8
+125
Unit
V
V
V
°C
CAPACITANCE
T
A
= +25°C
Parameter
Input capacitance
Symbol
C
IN
Condition
V
IN
= 0V, f = 1.0MHz
Package
32 Pin CSOJ, DIP, Flat Pack Evolutionary
36 Pin Flat Pack and
32 Pin CSOJ Revolutionary
32 Pin CSOJ, DIP, Flat Pack Evolutionary
36 Pin Flat Pack and
32 Pin CSOJ Revolutionary
32 Pin CLCC
Speed (ns)
15 to 55
15 to 25
35 to 55
15 to 55
15 to 55
35 to 55
15 to 55
Max
20
12
20
20
12
20
15
Unit
pF
pF
pF
pF
pF
pF
pF
Output capicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Symbol
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 2.1mA, V
CC
= 4.5
I
OH
= -1.0mA, V
CC
= 4.5
-15
-17
-20
-25
-35
-45
-55
Units
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
10
10
10
10
10
10
10
μA
10
10
10
10
10
10
10
μA
150
150
150
150
150
150
150 mA
20
20
20
15
15
15
15
mA
0.4
0.4
0.4
0.4
0.4
0.4
0.4
V
2.4
2.4
2.4
2.4
2.4
2.4
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
T
A
< 125°C
Parameter Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
-15
Min
15
0
15
10
3
0
10
10
3
0
10
10
Max
15
0
17
10
3
0
10
10
Min
17
-17
Max
17
0
20
12
3
0
12
12
Min
20
-20
Max
20
0
25
15
3
0
20
20
Min
25
-25
Max
25
0
35
20
3
0
20
20
Min
35
-35
Max
35
0
45
25
3
0
20
20
Min
45
-45
Max
45
0
55
30
Min
55
-55
Max
55
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
T
A
< 125°C
Parameter Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
-15
Min
15
14
14
10
14
0
0
3
0
Max
Min
17
14
15
10
14
0
0
3
0
-17
Max
Min
20
15
15
12
15
0
0
3
0
-20
Max
Min
25
20
20
15
20
0
0
3
0
-25
Max
Min
35
25
25
20
25
0
0
4
0
-35
Max
Min
45
30
30
25
30
0
0
4
0
-45
Max
Min
55
45
45
25
45
0
0
4
0
-55
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
12
15
20
25
25
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
I
OL
Current Source
D.U.T.
= 50 pF
V
Z
≈
1.5V
(Bipolar Supply)
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
I
OH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
TIMING WAVEFORM – READ CYCLE
t
RC
ADDRESS
t
AA
t
RC
ADDRESS
CS#
t
AA
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
t
ACS
t
CLZ
OE#
t
OE
t
CHZ
t
OHZ
DATA VALID
READ CYCLE 1 (CS# = OE# = V
IL
, WE# = V
IH
)
t
OLZ
DATA I/O
HIGH IMPEDANCE
READ CYCLE 2 (WE# = V
IH
)
WRITE CYCLE – WE# CONTROLLED
t
WC
ADDRESS
t
AW
t
CW
CS#
t
AH
t
AS
WE#
t
WP
t
OW
t
WHZ
t
DW
DATA VALID
t
DH
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
t
WC
ADDRESS
t
AW
t
AS
CS#
t
CW
t
AH
t
WP
WE#
t
DW
t
DH
DATA I/O
WRITE CYCLE 2, CS# CONTROLLED
DATA VALID
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
PACKAGE 101 – 32 LEAD, CERAMIC SOJ
21.1 (0.830) ± 0.25 (0.010)
0.2 (0.008)
± 0.05 (0.002)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
1.23 (0.442)
0.30 (0.012)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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