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MT45W4MW16BBB-708 WT TR

Description
PSRAM(伪 SRAM) 存储器 IC 64Mb(4M x 16) 并联 70 ns 54-VFBGA(6x9)
Categorysemiconductor    memory   
File Size970KB,61 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT45W4MW16BBB-708 WT TR Overview

PSRAM(伪 SRAM) 存储器 IC 64Mb(4M x 16) 并联 70 ns 54-VFBGA(6x9)

MT45W4MW16BBB-708 WT TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackageTape and Reel (TR) Cut Tape (CT)
memory typeVolatile
memory formatPSRAM
technologyPSRAM (pseudo-SRAM)
storage64Mb(4M x 16)
memory interfacein parallel
Write cycle time - words, pages70ns
Voltage - Power supply1.7V ~ 1.95V
Operating temperature-30°C ~ 85°C(TC)
Installation typesurface mount type
Package/casing54-VFBGA
Supplier device packaging54-VFBGA(6x9)
interview time70 ns
Basic product numberMT45W4MW16
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Features
Async/Page/Burst CellularRAM
TM
1.0 Memory
MT45W4MW16B*
*Note: Not recommended for new designs.
For the latest data sheet, refer to Micron’s Web site:
http://www.micron.com/products/psram/
Features
• Single device supports asynchronous, page, and
burst operations
• Random access time: 70ns
• V
CC
, V
CC
Q voltages
1.70V–1.95V V
CC
1.70V–3.30V V
CC
Q
• Page mode read access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
• Burst mode write access
Continuous burst
• Burst mode read access
4, 8, or 16 words, or continuous burst
MAX clock rate: 80 MHz (
t
CLK = 12.5ns)
Burst initial latency: 50ns (4 clocks) @ 80 MHz
t
ACLK: 9ns @ 80 MHz
• Low power consumption
Asynchronous READ: <25mA
Intrapage READ: <15mA
Initial access, burst READ:
(50ns [4 clocks] @ 80 MHz) < 35mA
Continuous burst READ: <15mA
Standby: 120µA – standard
100µA – low-power option
Deep power-down: <10µA (TYP @ 25°C)
• Low-power features
Temperature-compensated refresh (TCR)
Partial-array refresh (PAR)
Deep power-down (DPD) mode
Figure 1:
Ball Assignment – 54-Ball VFBGA
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
A21
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
WAIT
CLK
ADV#
NC
NC
NC
Top View
(Ball Down)
Options (continued)
• Frequency
66 MHz
80 MHz
• Standby power
Standard
Low-power
• Operating temperature range
Wireless (-30°C to +85°C)
Industrial (-40°C to +85°C)
2. Contact factory.
Designator
6
8
None
L
WT
3
IT
2
Options
• Configuration:
4 Meg x 16
• Package
54-ball VFBGA (standard)
54-ball VFBGA (lead-free)
• Timing
70ns access
85ns access
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_1.fm - Rev. G 10/05 EN
Designator
MT45W4MW16B
1
FB
BB
2
-70
-85
Notes: 1. Not recommended for new designs.
3. -30°C exceeds the CellularRAM Working
Group 1.0 specification of -25°C.
Part Number Example:
MT45W4MW16BFB-708LWT
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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