EEWORLDEEWORLDEEWORLD

Part Number

Search

MT46H32M16LFBF-6 IT:C TR

Description
SDRAM - 移动 LPDDR 存储器 IC 512Mb(32M x 16) 并联 166 MHz 5 ns 60-VFBGA(8x9)
Categorysemiconductor    memory   
File Size1MB,96 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT46H32M16LFBF-6 IT:C TR Overview

SDRAM - 移动 LPDDR 存储器 IC 512Mb(32M x 16) 并联 166 MHz 5 ns 60-VFBGA(8x9)

MT46H32M16LFBF-6 IT:C TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
Package卷带(TR)剪切带(CT)Digi-Reel®
memory typeVolatile
memory formatDRAM
technologySDRAM - Mobile LPDDR
storage512Mb(32M x 16)
memory interfacein parallel
Write cycle time - words, pages15ns
Voltage - Power supply1.7V ~ 1.95V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing60-VFBGA
Supplier device packaging60-VFBGA(8x9)
Clock frequency166 MHz
interview time5 ns
Basic product numberMT46H32M16
512Mb: x16, x32 Automotive LPDDR SDRAM
Features
Automotive LPDDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 banks
MT46H16M32LF – 4 Meg x 32 x 4 banks
MT46H16M32LG – 4 Meg x 32 x 4 banks
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh, 32ms for automotive temperature
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-6
Clock Rate
200 MHz
166 MHz
Access Time
5.0ns
5.0ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
– 16 Meg x 32 (4 Meg x 32 x 4 banks)
• Addressing
– JEDEC-standard addressing
• Plastic "green" package
– 60-ball VFBGA (8mm x 9mm)
1
– 90-ball VFBGA (8mm x 13mm)
2
– 90-ball VFBGA (8mm x 13mm)
2
• Timing – cycle time
– 5ns @ CL = 3 (200 MHz)
– 6ns @ CL = 3 (166 MHz)
• Power
– Standard I
DD2
/I
DD6
– Low-power I
DD2
/I
DD6
• Product certification
– Automotive
• Operating temperature range
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
• Design revision
Notes:
Marking
H
32M16
16M32
LF
BF
B5
BQ
-5
-6
None
L
A
IT
AT
:C
1. Only available for x16 configuration.
2. Only available for x32 configuration.
PDF: 09005aef846e285e
t67m_embedded_lpddr_512mb.pdf - Rev. D 2/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 187  1662  2781  2446  64  4  34  56  50  2 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号