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DGSK20-025AS-TUB

Description
二极管阵列 1 对共阴极 肖特基 250 V 12A 表面贴装型 TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
CategoryDiscrete semiconductor    diode   
File Size70KB,3 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

DGSK20-025AS-TUB Overview

二极管阵列 1 对共阴极 肖特基 250 V 12A 表面贴装型 TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

DGSK20-025AS-TUB Parametric

Parameter NameAttribute value
category
MakerIXYS
series-
PackagePipe fittings
Diode configuration1 pair of common cathodes
Diode typeSchottky
Current - Average rectification (Io) (per diode)12A
speedFast recovery = < 500ns, > 200mA (Io)
Operating Temperature - Junction-55°C ~ 175°C
Installation typesurface mount type
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
Supplier device packagingTO-263AA
Voltage - DC reverse (Vr) (maximum)250 V
Voltage at different If - Forward (Vf)1.5 V @ 5 A
Current at different Vr - reverse leakage1.3 mA @ 250 V
DGS 9-025AS DGS 10-025A(S)
DGSK 20-025A(S)
Gallium Arsenide Schottky Rectifier
I
DC
= 12 A
V
RRM
= 250 V
C
Junction
= 18 pF
Type
Marking on product
A
Circuit
C
Package
A = Anode, C = Cathode , TAB = Cathode
DGS 9-025AS
9A250AS
Single
TO-252 AA
A
A
C (TAB)
DGS 10-025A
DGS 10-025AS
DGS 10-025A
DGS 10-025AS
A
C
TO-220 AC
TO-263 AB
C
A
A
A
C (TAB)
Single
C (TAB)
DGSK20-025A
DGSK20-025AS
DGSK20-025A
DGSK20-025AS
TO-220 AB
Common cathode
A
C
A
A
C
A
C (TAB)
A
A
TO-263 AB
C (TAB)
Symbol
V
RRM/RSM
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
M
d
Conditions
Maximum Ratings
250
V
A
A
A
°C
°C
W
Nm
Features
• Low forward voltage
• Very high switching speed
• Low junction capacity of GaAs
- low reverse current peak at turn off
• Soft turn off
• Temperature independent switching
behaviour
• High temperature operation capability
• Epoxy meets UL 94V-0
Applications
• MHz switched mode power supplies
(SMPs)
• Small size SMPs
• High frequency converters
• Resonant converters
T
C
= 25°C; DC
T
C
= 90°C; DC
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
12
9
20
-55...+175
-55...+150
T
C
= 25°C
mounting torque (TO-220)
34
0.4...0.6
Symbol
I
R
V
F
C
J
R
thJC
R
thCH
Weight
Pulse test:
Conditions
V
R
= V
RRM
;
V
R
= V
RRM
;
I
F
= 5 A;
I
F
= 5 A;
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
1.3
1.3
1.3
1.2
18
4.4
1.5
mA
mA
V
V
pF
K/W
K/W
g
g
V
R
= 100 V; T
VJ
= 125°C
TO-220
TO-252
TO-220/263
Pulse Width = 5 ms, Duty Cycle < 2.0 %
0.5
0.3
2
Data according to IEC 60747 and per diode
unless otherwise specified
0435
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
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