DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK230
RF AMP. FOR VHF/CATV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
·
The Characteristic of Cross-Modulation is good.
CM = 108 dB
m
(TYP.) @f = 470 MHz, G
R
=
-
30 dB
Low Noise Figure
High Power Gain
Enhancement Typ.
(1.8)
PACKAGE DIMENSIONS
(Unit: mm)
0.4
+0.1
–0.05
1.5
+0.2
–0.1
2
3
4
5°
0.4
+0.1
–0.05
0.16
+0.1
–0.06
5°
0 to 0.1
0.4
+0.1
–0.05
2.8
–0.3
+0.2
·
NF1 = 2.2 dB TYP. (@ = 470 MHz)
NF2 = 0.9 dB TYP. (@ = 55 MHz)
G
PS
= 19.5 dB TYP. (@ = 470 MHz)
2.9±0.2
0.95
·
·
·
·
·
Automatically Mounting: Embossed Type Taping
Small Package: 4 Pins Mini Mold Package. (SC-61)
0.85
0.6
+0.1
–0.05
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
R
L
³
10 k
W
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8(±10)*
±8(±10)*
18
18
25
200
125
1
1
V
V
V
V
mA
mW
0.8
V
1.1
+0.2
–3.1
-
55 to +125
°
C
°
C
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due
to those voltages or fields.
Document No. P10587EJ3V0DS00 (3rd edition)
Date Published November 1996 N
Printed in Japan
1
5°
5°
©
(1.9)
Suitable for use as RF amplifier in CATV tuner.
1993
3SK230
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
SYMBOL
BV
DSX
MIN.
18
TYP.
MAX.
UNIT
V
TEST CONDITIONS
V
G1S
= V
G2S
=
-
2 V, I
D
= 10
m
A
V
DS
= 6 V, V
G2S
= 4.5 V, V
G1S
= 0.75 V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
m
A
V
DS
= 6 V, V
G1S
= 3 V, I
D
= 10
m
A
V
DS
= V
G2S
= 0, V
G1S
= ±8 V
V
DS
= V
G1S
= 0, V
G2S
= ±8 V
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 1 kHz
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 1 MHz
I
DSX
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
| y
fs
|
0.01
0
+0.6
+1.1
8.0
+1.0
+1.6
±20
±20
mA
V
V
nA
nA
mS
16
20
24
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure 1
Noise Figure 2
C
iss
C
oss
C
rss
G
ps
NF1
NF2
2.3
0.9
2.8
1.2
0.015
3.3
1.5
0.03
22.5
3.2
2.4
pF
pF
pF
dB
dB
dB
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 470 MHz
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 55 MHz
16.5
19.5
2.2
0.9
I
DSX
Classification
Rank
Marking
I
DSX
(mA)
U1A
U1A
0.01 to 3.0
U1B
U1B
1.0 to 8.0
2
3SK230
CHARACTERISTIC CURVE (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50 V
G2S
= 4.5 V
P
T
- Total Power Dissipation - mW
I
D
- Drain Current - mA
400
40
30
20
10
0
5
V
G1S
= 3 V
2.5 V
2.0 V
1.5 V
1.0 V
0.5 V
10
300
200
100
V
DS
- Drain to Source Voltage - V
0
25
50
75
100
125
T
A
- Ambient Temperature - °C
25
V
DS
= 6 V
I
D
- Drain Current - mA
V
G2S
= 3.5
V
|y
fs
| - Forward Transfer Admittance - mS
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
25
20
15
10
5
0
–1
0
1
2
3
4
V
GIS
- Gate1 to Source Voltage - V
2V
4V
3V
V
DS
= 6 V
f = 1 kHz
V
G2S
= 5 V
20
15
10
5
0
–1
0
1
2
3
3.0 V
2.5 V
2.0 V
1.5 V
4
V
GIS
- Gate 1 to Source Voltage - V
|y
fs
| - Forward Transfer Admittance - mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
32
24
16
8
2V
0
4
8
12
16
I
D
- Drain Current - mA
3V
20
V
G2S
= 6 V
5V
4V
V
DS
= 6 V
f = 1 kHz
5.0
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4.5 V)
f = 1 MH
Z
C
iss
- Input Capacitance - pF
4.0
3.0
2.0
1.0
0
1.0
2.0
3.0
4.0
5.0
V
G2S
- Gate2 to Source Voltage - V
3
3SK230
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4.5 V)
f = 1 MH
Z
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
2.0
(at V
DS
= 6 V
f = 470 MHz
I
D
= 10 mA
G
ps
C
oss
- Output Capacitance - pF
G
PS
- Power Gain - dB
2.0
NF - Noise Figure - dB
V
G2S
= 4.5 V)
1.0
1.5
5
0
1.0
–1.0
NF
–2.0
0.5
0
1.0
2.0
3.0
4.0
5.0
0
0
1.0
2.0
3.0
4.0
5.0
V
G2S
- Gate2 to Source Voltage - V
V
G2S
- Gate2 to Source Voltage - V
S-PARAMETER
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA, (Zo = 50
9
)
FREQUENCY
MHz
100
200
300
400
500
600
MAG
1.000
0.960
0.926
0.876
0.853
0.842
S11
ANG
MAG
2.160
1.953
1.868
1.760
1.691
1.608
S21
ANG
160.5
148.3
135.8
121.2
109.4
97.6
MAG
0.008
0.003
0.005
0.003
0.003
0.004
S12
ANG
12.8
81.1
MAG
0.942
0.947
0.906
0.908
0.915
0.889
S22
ANG
-
14.7
-
24.5
-
34.3
-
45.0
-
54.4
-
63.1
-
8.2
-
9.6
-
16.4
-
19.4
-
25.1
-
29.0
-
146.8
-
59.5
84.3
-
87.0
4
3SK230
G
PS
AND NF TEST CIRCUIT AT f = 470 MHz
V
G2S
1 000 pF
22 kΩ
1 000 pF
Ferrite Beads
40 pF OUTPUT
INPUT
50
Ω
1 000 pF
22 kΩ
40 pF
L
1
15 pF
15 pF
1 000 pF
L
2
50
Ω
L
3
1 000 pF
1 000 pF
V
G1S
V
DS
L
1
:
φ
1.2 mm U.E.W
φ
5 mm IT
L
2:
φ
1.2 mm U.E.W
φ
5 mm IT
L
3:
REC 2.2
µ
H
NF TEST CIRCUIT AT f = 55 MHz
V
G2S
V
DS
RFC
2.2 kΩ
Ferrite
Beads
1 500 pF
1 500 pF
1 000 pF
INPUT
3.3 kΩ
50
Ω
27 pF
47 kΩ
1 000 pF
OUTPUT
47 kΩ
27 pF
3.3 kΩ
50
Ω
V
G1S
5
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