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N25Q128A13ESEC0E

Description
FLASH - NOR 存储器 IC 128Mb SPI 108 MHz 8-SOP2
Categorysemiconductor    memory   
File Size1MB,83 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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N25Q128A13ESEC0E Overview

FLASH - NOR 存储器 IC 128Mb SPI 108 MHz 8-SOP2

N25Q128A13ESEC0E Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackagePipe fittings
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage128Mb
memory organization32M x 4
memory interfaceSPI
Clock frequency108 MHz
Write cycle time - words, pages8ms,5ms
Voltage - Power supply2.7V ~ 3.6V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing8-SOIC (0.209", 5.30mm wide)
Supplier device packaging8-SOP2
Basic product numberN25Q128A13
128Mb, 3V, Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB Sector Erase
N25Q128A
Features
SPI-compatible serial bus interface
108 MHz (MAX) clock frequency
2.7–3.6V single supply voltage
Dual/quad I/O instruction provides increased
throughput up to 432 MHz
Supported protocols
– Extended SPI, dual I/O, and quad I/O
Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly af-
ter power-on
PROGRAM/ERASE SUSPEND operations
Continuous read of entire memory via a single com-
mand
– Fast read
– Quad or dual output fast read
– Quad or dual I/O fast read
Flexible to fit application
– Configurable number of dummy cycles
– Output buffer configurable
Software reset
64-byte, user-lockable, one-time programmable
(OTP) dedicated area
Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Full-chip erase
• Write protection
– Software write protection applicable to every
64KB sector via volatile lock bit
– Hardware write protection: protected area size
defined by five nonvolatile bits (BP0, BP1, BP2,
BP3, and TB)
– Additional smart protections, available upon re-
quest
• Electronic signature
– JEDEC-standard 2-byte signature (BA18h)
– Unique ID code (UID): 17 read-only bytes, in-
cluding:
• Two additional extended device ID (EDID)
bytes to identify device factory options
• Customized factory data (14 bytes)
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages JEDEC standard, all RoHS compliant
– F7 = V-PDFN-8 6mm x 5mm Sawn (MLP8 6mm x
5mm)
– F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)
– 12 = T-PBGA-24b05 6mm x 8mm
– 14 = T-PBGA-24b05 6mm x 8mm, 4x6 ball array
– SF = SOP2-16 300 mils body width (SO16W)
– SE = SOP2-8 208 mils body width (SO8W)
09005aef845665fe
n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
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