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MT9HTF12872FZ-80EH1N8

Description
存储器 - 模块 DDR2 SDRAM 1GB 800MT/s 240-FBDIMM
Categorystorage    memory card   
File Size310KB,12 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT9HTF12872FZ-80EH1N8 Overview

存储器 - 模块 DDR2 SDRAM 1GB 800MT/s 240-FBDIMM

MT9HTF12872FZ-80EH1N8 Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
Packagebox
memory typeDDR2 SDRAM
storage1GB
speed800MT/s
Package/casing240-FBDIMM
1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
Features
DDR2 SDRAM FBDIMM
MT9HTF12872FZ – 1GB
Features
• 240-pin, DDR2 fully-buffered dual in-line memory
module (FBDIMM)
• Fast data transfer rates: PC2-5300 or PC2-6400
• 1GB (128 Meg x 72)
• 4.0 Gb/s and 4.8 Gb/s link transfer rates
• High-speed, 1.5V differential, point-to-point link be-
tween the host controller and advanced memory
buffer (AMB)
• Fault-tolerant; can work around a bad bit lane in
each direction
• High-density scaling with up to eight FBDIMMs per
channel
• SMBus interface to AMB for configuration register
access
• In-band and out-of-band command access
• Deterministic protocol
– Enables memory controller to optimize DRAM ac-
cesses for maximum performance
– Delivers precise control and repeatable memory
behavior
• Automatic DDR2 SDRAM bus and channel calibra-
tion
• Transmitter de-emphasis to reduce ISI
• MBIST and IBIST test functions
Table 1: Key Timing Parameters
Speed
Grade
-80E
-667
Data Rate (MT/s)
Industry Nomenclature
PC2-6400
PC2-5300
CL = 6
800
CL = 5
800
667
CL = 4
533
533
CL = 3
400
400
t
RCD
t
RP
t
RC
• Transparent mode for DRAM test support
• V
DD
= V
DDQ
= 1.8V for DRAM
• V
REF
= 0.9V SDRAM command and address termina-
tion
• V
CC
= 1.5V for AMB
• V
DDSPD
= 3–3.6V for AMB and EEPROM
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
• Supports 95°C operation with 2X refresh
• Halogen-free PCB
Figure 1: 240-Pin FBDIMM (MO-256 R/C A)
Module height: 30.35mm (1.19in)
Options
• Package
– 240-pin DIMM (Halogen-free)
• Frequency/CAS latency
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
Marking
Z
-80E
-667
(ns)
12.5
15
(ns)
(ns)
12.5
15
55
55
PDF: 09005aef83de8266
htf9c128x72fz.pdf - Rev. B 4/14 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.

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