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MT46H32M16LFBF-6 IT:C

Description
SDRAM - 移动 LPDDR 存储器 IC 512Mb(32M x 16) 并联 166 MHz 5 ns 60-VFBGA(8x9)
Categorysemiconductor    memory   
File Size1MB,96 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT46H32M16LFBF-6 IT:C Overview

SDRAM - 移动 LPDDR 存储器 IC 512Mb(32M x 16) 并联 166 MHz 5 ns 60-VFBGA(8x9)

MT46H32M16LFBF-6 IT:C Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
Packagetray
memory typeVolatile
memory formatDRAM
technologySDRAM - Mobile LPDDR
storage512Mb(32M x 16)
memory interfacein parallel
Write cycle time - words, pages15ns
Voltage - Power supply1.7V ~ 1.95V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing60-VFBGA
Supplier device packaging60-VFBGA(8x9)
Clock frequency166 MHz
interview time5 ns
Basic product numberMT46H32M16
512Mb: x16, x32 Automotive LPDDR SDRAM
Features
Automotive LPDDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 banks
MT46H16M32LF – 4 Meg x 32 x 4 banks
MT46H16M32LG – 4 Meg x 32 x 4 banks
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh, 32ms for automotive temperature
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-6
Clock Rate
200 MHz
166 MHz
Access Time
5.0ns
5.0ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
– 16 Meg x 32 (4 Meg x 32 x 4 banks)
• Addressing
– JEDEC-standard addressing
• Plastic "green" package
– 60-ball VFBGA (8mm x 9mm)
1
– 90-ball VFBGA (8mm x 13mm)
2
– 90-ball VFBGA (8mm x 13mm)
2
• Timing – cycle time
– 5ns @ CL = 3 (200 MHz)
– 6ns @ CL = 3 (166 MHz)
• Power
– Standard I
DD2
/I
DD6
– Low-power I
DD2
/I
DD6
• Product certification
– Automotive
• Operating temperature range
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
• Design revision
Notes:
Marking
H
32M16
16M32
LF
BF
B5
BQ
-5
-6
None
L
A
IT
AT
:C
1. Only available for x16 configuration.
2. Only available for x32 configuration.
PDF: 09005aef846e285e
t67m_embedded_lpddr_512mb.pdf - Rev. D 2/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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