MT46H32M32LFCM-5 IT:A datasheet, PDF

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MT46H32M32LFCM-5 IT:A: DescriptionSDRAM - 移动 LPDDR 存储器 IC 1Gb（32M x 32）并联 200 MHz 5 ns 90-VFBGA（10x13）; Categorysemiconductor memory; File Size3MB，95 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT46H32M32LFCM-5 IT:A Overview

SDRAM - 移动 LPDDR 存储器 IC 1Gb（32M x 32）并联 200 MHz 5 ns 90-VFBGA（10x13）

MT46H32M32LFCM-5 IT:A Parametric

Parameter Name	Attribute value
category
Maker	Micron Technology
series	-
Package	tray
memory type	Volatile
memory format	DRAM
technology	SDRAM - Mobile LPDDR
storage	1Gb（32M x 32）
memory interface	in parallel
Write cycle time - words, pages	15ns
Voltage - Power supply	1.7V ~ 1.95V
Operating temperature	-40°C ~ 85°C（TA）
Installation type	surface mount type
Package/casing	90-VFBGA
Supplier device packaging	90-VFBGA（10x13）
Clock frequency	200 MHz
interview time	5 ns
Basic product number	MT46H32M32

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1Gb: x16, x32 Mobile LPDDR SDRAM

Features

Mobile Low-Power DDR SDRAM

MT46H64M16LF – 16 Meg x 16 x 4 Banks

MT46H32M32LF – 8 Meg x 32 x 4 Banks

Features

•

DDQ

= 1.70–1.95V

•

Bidirectional data strobe per byte of data (DQS)

•

Internal, pipelined double data rate (DDR)

architecture; two data accesses per clock cycle

•

Differential clock inputs (CK and CK#)

•

Commands entered on each positive CK edge

•

DQS edge-aligned with data for READs; center-

aligned with data for WRITEs

•

4 internal banks for concurrent operation

•

Data masks (DM) for masking write data—one mask

per byte

•

Programmable burst lengths (BL): 2, 4, 8, or 16

•

Concurrent auto precharge option is supported

•

Auto refresh and self refresh modes

•

1.8V LVCMOS-compatible inputs

•

On-chip temp sensor to control self refresh rate

•

Partial-array self refresh (PASR)

•

Deep power-down (DPD)

•

Status read register (SRR)

•

Selectable output drive strength (DS)

•

Clock stop capability

•

64ms refresh

Table 1: Key Timing Parameters (CL = 3)

Speed Grade

-5

-54

-6

-75

Clock Rate (MHz)

200

185

166

133

Access Time

5.0ns

5.5ns

6.0ns

Options

•

DDQ

–

1.8V/1.8V

•

Configuration

–

64 Meg x 16 (16 Meg x 16 x 4 banks)

–

32 Meg x 32 (8 Meg x 32 x 4 banks)

•

Row-size option

–

JEDEC-standard option

–

Reduced page-size option

•

Plastic green package

–

60-ball VFBGA (10mm x 11.5mm)

–

90-ball VFBGA (10mm x 13mm)

•

Timing – cycle time

–

5ns @ CL = 3

–

5.4ns @ CL = 3

–

6ns @ CL = 3

–

7.5ns @ CL = 3

•

Power

–

Standard I

DD2

DD6

–

Low-power I

DD2

DD6

•

Operating temperature range

–

Commercial (0˚ to +70˚C)

–

Industrial (–40˚C to +85˚C)

•

Design revision

Notes:

Marking

64M16

32M32

-5

-54

-6

-75

None

1. Contact factory for availability.

2. Only available for x16 configuration.

3. Only available for x32 configuration.

PDF: 09005aef82ce3074

1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1Gb: x16, x32 Mobile LPDDR SDRAM

General Description ......................................................................................................................................... 8

Functional Block Diagrams ............................................................................................................................... 9

Ball Assignments and Descriptions ................................................................................................................. 11

Package Dimensions ...................................................................................................................................... 15

Electrical Specifications .................................................................................................................................. 17

Electrical Specifications – I

Parameters ........................................................................................................ 20

Electrical Specifications – AC Operating Conditions ......................................................................................... 24

Output Drive Characteristics ........................................................................................................................... 28

Functional Description ................................................................................................................................... 31

Commands .................................................................................................................................................... 32

DESELECT ................................................................................................................................................ 33

NO OPERATION ........................................................................................................................................ 33

LOAD MODE REGISTER ............................................................................................................................ 33

ACTIVE ..................................................................................................................................................... 33

READ ........................................................................................................................................................ 34

WRITE ...................................................................................................................................................... 35

PRECHARGE ............................................................................................................................................. 36

BURST TERMINATE .................................................................................................................................. 37

AUTO REFRESH ........................................................................................................................................ 37

SELF REFRESH ........................................................................................................................................... 38

DEEP POWER-DOWN ................................................................................................................................ 38

Truth Tables ................................................................................................................................................... 39

State Diagram ................................................................................................................................................ 44

Initialization .................................................................................................................................................. 45

Standard Mode Register .................................................................................................................................. 48

Burst Length .............................................................................................................................................. 48

Burst Type ................................................................................................................................................. 49

CAS Latency .............................................................................................................................................. 50

Operating Mode ......................................................................................................................................... 51

Extended Mode Register ................................................................................................................................. 52

Temperature-Compensated Self Refresh .................................................................................................... 52

Partial-Array Self Refresh ........................................................................................................................... 53

Output Drive Strength ................................................................................................................................ 53

Status Read Register ....................................................................................................................................... 54

Bank/Row Activation ...................................................................................................................................... 56

READ Operation ............................................................................................................................................. 57

WRITE Operation ........................................................................................................................................... 68

PRECHARGE Operation .................................................................................................................................. 80

Auto Precharge ............................................................................................................................................... 80

Concurrent Auto Precharge ........................................................................................................................ 81

AUTO REFRESH Operation ............................................................................................................................. 86

SELF REFRESH Operation .............................................................................................................................. 87

Power-Down .................................................................................................................................................. 88

Deep Power-Down .................................................................................................................................... 90

Clock Change Frequency ................................................................................................................................ 92

Revision History ............................................................................................................................................. 93

Rev. K – 07/09 ............................................................................................................................................. 93

Rev. J – 06/09 .............................................................................................................................................. 93

Rev. I – 03/09 .............................................................................................................................................. 93

Rev. H – 02/09 ............................................................................................................................................ 93

Contents

PDF: 09005aef82ce3074

1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1Gb: x16, x32 Mobile LPDDR SDRAM

Rev. G – 06/08 ............................................................................................................................................

Rev. F – 04/08Rev. E – 03/08 ........................................................................................................................

Rev. D – 02/08 ............................................................................................................................................

Rev. C – 09/07 .............................................................................................................................................

Rev. B – 07/07 .............................................................................................................................................

Rev. A – 02/07 .............................................................................................................................................

Revision History for Commands, Operations, and Timing Diagrams .............................................................

Update – 05/08 ...........................................................................................................................................

Update – 03/08 ...........................................................................................................................................

Update – 12/07 ...........................................................................................................................................

Update – 07/07 ...........................................................................................................................................

PDF: 09005aef82ce3074

1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1Gb: x16, x32 Mobile LPDDR SDRAM

Table 1: Key Timing Parameters (CL = 3) .......................................................................................................... 1

Table 2: Configuration Addressing – 1Gb .......................................................................................................... 2

Table 3: VFBGA Ball Descriptions .................................................................................................................. 13

Table 4: Absolute Maximum Ratings .............................................................................................................. 17

Table 5: AC/DC Electrical Characteristics and Operating Conditions ............................................................... 17

Table 6: Capacitance (x16, x32) ...................................................................................................................... 18

Table 7: I

Specifications and Conditions (x16) ............................................................................................ 20

Table 8: I

Specifications and Conditions (x32) ............................................................................................ 21

Table 9: I

DD6

Specifications and Conditions ................................................................................................... 22

Table 10: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 24

Table 11: Target Output Drive Characteristics (Full Strength) .......................................................................... 28

Table 12: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 29

Table 13: Target Output Drive Characteristics (One-Half Strength) ................................................................. 30

Table 14: Truth Table – Commands ............................................................................................................... 32

Table 15: DM Operation Truth Table ............................................................................................................. 33

Table 16: Truth Table – Current State Bank

– Command to Bank

............................................................... 39

Table 17: Truth Table – Current State Bank

– Command to Bank

.............................................................. 40

Table 18: Truth Table – CKE .......................................................................................................................... 43

Table 19: Burst Definition Table .................................................................................................................... 49

List of Tables

PDF: 09005aef82ce3074

1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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