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MT48H8M32LFB5-8 TR

Description
SDRAM - 移动 LPSDR 存储器 IC 256Mb(8M x 32) 并联 125 MHz 7 ns 90-VFBGA(8x13)
Categorysemiconductor    memory   
File Size3MB,77 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT48H8M32LFB5-8 TR Overview

SDRAM - 移动 LPSDR 存储器 IC 256Mb(8M x 32) 并联 125 MHz 7 ns 90-VFBGA(8x13)

MT48H8M32LFB5-8 TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackageTape and Reel (TR) Cut Tape (CT)
memory typeVolatile
memory formatDRAM
technologySDRAM - Mobile LPSDR
storage256Mb(8M x 32)
memory interfacein parallel
Write cycle time - words, pages15ns
Voltage - Power supply1.7V ~ 1.95V
Operating temperature0°C ~ 70°C(TA)
Installation typesurface mount type
Package/casing90-VFBGA
Supplier device packaging90-VFBGA(8x13)
Clock frequency125 MHz
interview time7 ns
Basic product numberMT48H8M32
256Mb: x16, x32 Mobile SDRAM
Features
Mobile SDRAM
MT48H16M16LF – 4 Meg x 16 x 4 banks
MT48H8M32LF – 2 Meg x 32 x 4 banks
Features
• Fully synchronous; all signals registered on positive
edge of system clock
• V
DD
/V
DDQ
= 1.70–1.95V
• Internal, pipelined operation; column address can
be changed every clock cycle
• Four internal banks for concurrent operation
• Programmable burst lengths: 1, 2, 4, 8, or
continuous page
• Auto precharge, includes concurrent auto precharge
• Auto refresh and self refresh modes
• LVTTL-compatible inputs and outputs
• On-chip temperature sensor to control refresh rate
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive (DS)
• 64ms refresh period (8192 rows)
Table 1:
Addressing
16 Meg x 16
8 Meg x 32
2 Meg x 32 x 4
banks
8K
4K (A[11:0])
4 (BA[1:0])
512 (A[8:0])
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
4 Meg x 16 x 4
banks
8K
8K (A[12:0])
4 (BA[1:0])
512 (A[8:0])
Table 2:
Key Timing Parameters
CL = CAS (READ) latency
Clock Rate
(MHz)
Access Time Data
Speed
Setup
Grade CL = 2 CL = 3 CL = 2 CL = 3 Time
-75
-8
104
100
133
125
8ns
9ns
6ns
7ns
1.5ns
2.5ns
Data
Hold
Time
1ns
1ns
Options
• V
DD
/V
DDQ
1.8V/1.8V
• Configuration
16 Meg x 16 (4 Meg x 16 x 4 banks)
8 Meg x 32 (2 Meg x 32 x 4 banks)
• Plastic “green” package
54-ball VFBGA (8mm x 9mm)
90-ball VFBGA (8mm x 13mm)
• Timing – cycle time
7.5ns at CL = 3
8ns at CL = 3
• Power
Standard I
DD2P
/I
DD7
Low I
DD2P
/I
DD7
• Operating temperature range
Commercial (0° to +70°C)
Industrial (–40°C to +85°C)
• Design revision
Marking
H
16M16
8M32
BF
B5
-75
-8
None
L
None
IT
:G
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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