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PC28F512M29EWHB TR

Description
FLASH - NOR 存储器 IC 512Mb 并联 100 ns 64-FBGA(11x13)
Categorysemiconductor    memory   
File Size1MB,78 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

PC28F512M29EWHB TR Overview

FLASH - NOR 存储器 IC 512Mb 并联 100 ns 64-FBGA(11x13)

PC28F512M29EWHB TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackageTape and Reel (TR)
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage512Mb
memory organization64M x 8,32M x 16
memory interfacein parallel
Write cycle time - words, pages100ns
interview time100 ns
Voltage - Power supply2.7V ~ 3.6V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing64-LBGA
Supplier device packaging64-FBGA(11x13)
Basic product numberPC28F512
256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx
JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx
JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx
PC28F00BM29EWxx, RC28F00BM29EWxx
Features
• 2Gb = stacked device (two 1Gb die)
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65–V
CC
(I/O buffers)
• Asynchronous random/page read
– Page size: 16 words or 32 bytes
– Page access: 25ns
– Random access: 100ns (Fortified BGA);
110ns (TSOP)
• Buffer program: 512-word program buffer
• Program time
– 0.88µs per byte (1.14 MB/s) TYP when using full
512-word buffer size in buffer program
• Memory organization
– Uniform blocks: 128-Kbytes or 64-Kwords each
• Program/erase controller
– Embedded byte (x8)/word (x16) program algo-
rithms
• Program/erase suspend and resume capability
– Read from another block during a PROGRAM
SUSPEND operation
– Read or program another block during an ERASE
SUSPEND operation
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability
– Fast buffered/batch programming
– Fast block/chip erase
• V
PP
/WP# pin protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
– Password access
• Extended memory block
– 128-word (256-byte) block for permanent, secure
identification
– Programmed or locked at the factory or by the
customer
• Low power consumption: Standby mode
• JESD47-compliant
– 100,000 minimum ERASE cycles per block
– Data retention: 20 years (TYP)
• 65nm multilevel cell (MLC) process technology
• Package
– 56-pin TSOP, 14 x 20mm
– 64-ball fortified BGA, 13 x 11mm
• Green packages available
– RoHS-compliant
– Halogen-free
• Operating temperature
– Ambient: –40°C to +85°C
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. E 11/16 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
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