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PC28F128P33B85D

Description
FLASH - NOR 存储器 IC 128Mb 并联 52 MHz 85 ns 64-EasyBGA(8x10)
Categorysemiconductor    memory   
File Size1MB,111 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

PC28F128P33B85D Overview

FLASH - NOR 存储器 IC 128Mb 并联 52 MHz 85 ns 64-EasyBGA(8x10)

PC28F128P33B85D Parametric

Parameter NameAttribute value
category
MakerMicron Technology
seriesStrataFlash™
Packagetray
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage128Mb
memory organization8M x 16
memory interfacein parallel
Clock frequency52 MHz
Write cycle time - words, pages85ns
interview time85 ns
Voltage - Power supply2.3V ~ 3.6V
Operating temperature-40°C ~ 85°C(TC)
Installation typesurface mount type
Package/casing64-TBGA
Supplier device packaging64-EasyBGA(8x10)
Basic product numberPC28F128
256Mb, 512Mb, 1Gb StrataFlash Memory
Features
Micron StrataFlash Embedded Memory
MT28GU256AAA2EGC-0AAT, MT28GU512AAA2EGC-0AAT,
MT28GU01GAAA2EGC-0AAT
Features
• High-performance read, program, and erase
– 106ns initial read access
– 108 MHz with zero wait-state synchronous burst
reads: 7ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst
reads: 6ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst
reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered programming: 2.0 μs/word (TYP),
512Mb
– Block erase: 0.9s per block (TYP)
– 20μs (TYP) program/erase suspend
• Architecture
– 16-bit wide data bus
– Multilevel cell technology
– Symmetrically-blocked array architecture
– 256KB erase blocks
– 1Gb device: Eight 128Mb partitions
– 512Mb device: Eight 64Mb partitions
– 256Mb device: Eight 32Mb partitions
– Status register for partition/device status
– Blank check feature
• Quality and reliability
– Automotive temperature: –40°C to +105°C (Grade
2 AEC-Q100)
– Minimum 100,000 ERASE cycles per block
– More than 20 years data retention
– 65nm process technology
• Power
– Core voltage: 1.7– 2.0V
– I/O voltage: 1.7–2.0V
– Standby current: 60μA (TYP) for 512Mb
– Automatic power savings mode
– 16-word synchronous-burst read current: 23mA
(TYP) @ 108 MHz; 24mA (TYP) @ 133 MHz
• Software
– Micron
®
Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended com-
mand set (ECS) compatible
– Common Flash interface (CFI) capable
• Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: V
PP
= GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
• Density and packaging
– 256Mb, 512Mb, and 1Gb
– Address-data multiplexed interface
– 64-Ball TBGA
CCMTD-1725822587-2936
MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
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