BC212B
BC212B
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 68.
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings*
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
50
60
5
100
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Parameter
I
C
= 2mA
I
C
= 10µA
I
E
= 10µA
V
CB
= 30V
V
EB
= 4V
V
CE
= 5V, I
C
= 10µA
V
CE
= 5V, I
C
= 2mA
I
C
= 100mA, I
B
= 5mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 10V, f = 1MHz
V
CE
= 5V, I
C
= 2mA, f = 1KHz
V
CE
= 5V, I
C
= 200µA, f = 1KHz
R
G
= 2KΩ, BW = 200Hz
200
0.6
40
60
0.6
1.4
0.72
6
400
10
dB
V
V
V
pF
Test Condition
Min.
50
60
5
15
15
Typ.
Max.
Units
V
V
V
nA
nA
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
On Characteristics*
h
FE
DC Current Gain
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characteristics
C
ob
Output Capacitance
h
fe
NF
Small Signal Current Gain
Noise Figure
* Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. A, October 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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