BC636_J35Z datasheet, PDF - EEWORLD Datasheet

BC636_J35Z: Description晶体管 - 双极 (BJT) - 单 PNP 45 V 1 A 100MHz 1 W 通孔 TO-92-3; CategoryDiscrete semiconductor The transistor; File Size118KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BC636_J35Z Overview

晶体管 - 双极 (BJT) - 单 PNP 45 V 1 A 100MHz 1 W 通孔 TO-92-3

Parameter Name	Attribute value
category
Maker	ON Semiconductor
series	-
Package	Bulk
Transistor type	PNP
Vce saturation voltage drop (maximum value) when Ib and Ic are different	500mV @ 50mA，500mA
Current - collector cutoff (maximum)	100nA（ICBO）
DC current gain (hFE) (minimum value) when different Ic, Vce	40 @ 150mA，2V
Frequency - Transition	100MHz
Operating temperature	150°C（TJ）
Installation type	Through hole
Package/casing	TO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packaging	TO-92-3
Current - Collector (Ic) (maximum)	1 A
Voltage - collector-emitter breakdown (maximum)	45 V
Power - Max	1 W
Basic product number	BC636

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