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BC639_J35Z

Description
晶体管 - 双极 (BJT) - 单 NPN 80 V 1 A 100MHz 1 W 通孔 TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size56KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC639_J35Z Overview

晶体管 - 双极 (BJT) - 单 NPN 80 V 1 A 100MHz 1 W 通孔 TO-92-3

BC639_J35Z Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackageBulk
Transistor typeNPN
Vce saturation voltage drop (maximum value) when Ib and Ic are different500mV @ 50mA,500mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) (minimum value) when different Ic, Vce40 @ 150mA,2V
Frequency - Transition100MHz
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92-3
Current - Collector (Ic) (maximum)1 A
Voltage - collector-emitter breakdown (maximum)80 V
Power - Max1 W
Basic product numberBC639
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