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BC558BTAR

Description
晶体管 - 双极 (BJT) - 单 PNP 30 V 100 mA 150MHz 500 mW 通孔 TO-92-3
CategoryDiscrete semiconductor    The transistor   
File Size349KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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晶体管 - 双极 (BJT) - 单 PNP 30 V 100 mA 150MHz 500 mW 通孔 TO-92-3

BC558BTAR Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
Package带盒(TB)
Transistor typePNP
Vce saturation voltage drop (maximum value) when Ib and Ic are different650mV @ 5mA,100mA
Current - collector cutoff (maximum)15nA(ICBO)
DC current gain (hFE) (minimum value) when different Ic, Vce200 @ 2mA,5V
Frequency - Transition150MHz
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92-3
Current - Collector (Ic) (maximum)100 mA
Voltage - collector-emitter breakdown (maximum)30 V
Power - Max500 mW
Basic product numberBC558
Is Now Part of
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Please
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