Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
5.5 A, 20 V.
R
DS(ON)
= 35 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 51 mΩ @ V
GS
= 2.5 V
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
Compact industry standard SC75-6 surface mount
package
Applications
•
Battery management
S
S
G
S
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
±
12
(Note 1a)
Units
V
V
A
W
°C
5.5
16
1.6
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
–
55 to +150
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
°C/W
Package Marking and Ordering Information
Device Marking
.B
Device
FDJ128N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2004
Fairchild Semiconductor Corporation
FDJ128N Rev B2 W)
FDJ128N
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min
20
Typ
Max
Units
V
Off Characteristics
I
D
= 250
µA,Referenced
to 25°C
V
DS
= 16 V,
V
GS
= 0 V
12
1
±100
0.6
1.0
–0.3
29
41
38
8
19
35
51
53
1.5
mV/°C
µA
nA
V
GS
=
±12
V, V
DS
= 0 V
V
DS
= V
GS
,
I
D
= 250
µA
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
mV/°C
mΩ
A
S
I
D
= 250
µA,Referenced
to 25°C
V
GS
= 4.5 V, I
D
= 5.5 A
V
GS
= 2.5 V, I
D
= 4.7 A
V
GS
= 4.5 V, I
D
= 5.5,T
J
=125°C
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V,
I
D
= 5.5 A
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 15 mV,
V
GS
= 0 V,
543
125
65
pF
pF
pF
Ω
15
11
24
7
8
ns
ns
ns
ns
nC
nC
nC
f = 1.0 MHz
2.0
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
7
5
14
3
V
DS
= 10 V,
V
GS
= 5 V
I
D
= 5.5 A,
5
1.2
1.4
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode ForwardVoltage V
GS
= 0 V, I
S
= 1.3 A
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I
F
= 5.5 A,
d
iF
/d
t
= 100 A/µs
(Note 2)
0.7
12
3
1.3
1.2
A
V
nS
nC
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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