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FDC633N_F095

Description
表面贴装型 N 通道 30 V 5.2A(Ta) 1.6W(Ta) SuperSOT™-6
CategoryDiscrete semiconductor    The transistor   
File Size283KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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FDC633N_F095 Overview

表面贴装型 N 通道 30 V 5.2A(Ta) 1.6W(Ta) SuperSOT™-6

FDC633N_F095 Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackageTape and Reel (TR)
FET typeN channel
technologyMOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)5.2A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)2.5V,4.5V
On-resistance (maximum value) at different Id and Vgs42 milliohms @ 5.2A, 4.5V
Vgs(th) (maximum value) when different Id1V @ 250µA
Vgs (maximum value)±8V
FET function-
Power dissipation (maximum)1.6W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount type
Supplier device packagingSuperSOT™-6
Package/casingSOT-23-6 slim type, TSOT-23-6
Drain-source voltage (Vdss)30 V
Gate charge (Qg) (maximum value) at different Vgs16 nC @ 4.5 V
Input capacitance (Ciss) (maximum value) at different Vds538 pF @ 10 V
Basic product numberFDC633
March 1998
FDC633N
N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel enhancement mode power field effect
transistors is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMICA cards, and other
battery powered circuits where fast switching,low in-line
power loss and resistance to transients are needed in a very
small outline surface mount package.
Features
5.2 A, 30 V. R
DS(ON)
= 0.042
@ V
GS
= 4.5 V
R
DS(ON)
= 0.054
@ V
GS
= 2.5 V.
SuperSOT
TM
-6 package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
S
D
D
1
6
.63
3
2
5
G
SuperSOT
TM
pin
1
D
D
3
4
-6
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol Parameter
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1a)
FDC633N
30
±8
5.2
16
1.6
0.8
-55 to 150
Units
V
V
A
W
T
J
,T
STG
R
θJA
R
θJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
FDC633N Rev.C
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