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FQU6N40CTU_NBEA001

Description
通孔 N 通道 400 V 4.5A(Tc) 2.5W(Ta),48W(Tc) I-PAK
CategoryDiscrete semiconductor    The transistor   
File Size1018KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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通孔 N 通道 400 V 4.5A(Tc) 2.5W(Ta),48W(Tc) I-PAK

FQU6N40CTU_NBEA001 Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
seriesQFET®
PackagePipe fittings
FET typeN channel
technologyMOSFET (metal oxide)
Current at 25°C - Continuous Drain (Id)4.5A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
On-resistance (maximum value) at different Id and Vgs1 ohm @ 2.25A, 10V
Vgs(th) (maximum value) when different Id4V @ 250µA
Vgs (maximum value)±30V
FET function-
Power dissipation (maximum)2.5W(Ta),48W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingI-PAK
Package/casingTO-251-3 short lead, IPak, TO-251AA
Drain-source voltage (Vdss)400 V
Gate charge (Qg) (maximum value) at different Vgs20 nC @ 10 V
Input capacitance (Ciss) (maximum value) at different Vds625 pF @ 25 V
Basic product numberFQU6
FQD6N40C / FQU6N40C
N-Channel MOSFET
March 2013
N-Channel QFET MOSFET
400
V, 4.5 A, 1.0
Description
FQD6N40C / FQU6N40C
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
4.5
A,
400
V, R
DS(on)
=
1.0
(Max)
@V
GS
= 10 V,
I
D
=
2.25
A
• Low Gate Charge (Typ.
16
nC)
• Low Crss (Typ.
15
pF)
• 100% Avalanche Tested
D
D
!
G
S
D-PAK
FQD Series
G D S
I-PAK
G
!
FQU Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD6N40C / FQU6N40C
400
4.5
2.7
18
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
270
4.5
4.8
4.5
2.5
48
0.38
-55 to +150
300
T
J
, T
STG
T
L
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient.*
Thermal Resistance, Junction-to-Ambient.
Typ
--
--
--
Max
2.6
50
110
Unit
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2003 Fairchild Semiconductor Corporation
FQD6N40C /
FQU6N40C
Rev. C0
www.fairchildsemi.com
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