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FGY60T120SQDN

Description
IGBT - 1200 V 120 A 517 W 通孔 TO-247-3
CategoryDiscrete semiconductor    The transistor   
File Size555KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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FGY60T120SQDN Overview

IGBT - 1200 V 120 A 517 W 通孔 TO-247-3

FGY60T120SQDN Parametric

Parameter NameAttribute value
category
MakerON Semiconductor
series-
PackagePipe fittings
IGBT type-
Vce(on) (maximum value) when Vge and Ic are different1.95V @ 15V,60A
switching energy-
input typestandard
Td (on/off) value at 25°C52ns/296ns
Test Conditions600V, 60A, 10 ohms, 15V
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Package/casingTO-247-3 variant
Supplier device packagingTO-247-3
Voltage - collector-emitter breakdown (maximum)1200 V
Current - Collector (Ic) (maximum)120 A
Current - collector pulse (Icm)240 A
Power - Max517 W
gate charge311 nC
Basic product numberFGY60

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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